TY - JOUR A1 - Bonse, Jörn A1 - Bachelier, G. A1 - Wiggins, S. M. A1 - Siegel, J. A1 - Solis, J. A1 - Krüger, Jörg A1 - Sturm, Heinz T1 - Femtosecond laser ablation of indium phosphide in air: dynamical, structural and morphological evolution JF - Journal of optoelectronics and advanced materials N2 - The irradiation of single-crystalline indium phosphide (c-InP) by Ti:sapphire femtosecond laser pulses (130 fs, 800 nm) in air is studied by means of in-situ time resolved reflectivity measurements [fs-time-resolved microscopy (100 fs-10 ns) and point probing analysis (ns - µs)] and by complementary ex-situ surface analytical methods (Micro Raman Spectroscopy, Scanning Force, and Optical Microscopy). The dynamics of melting, ablation, and optical breakdown as well as structural changes resulting from rapid solidification are investigated in detail. Different laser-induced surface morphologies are characterized and discussed on the basis of recent ablation and optical breakdown models. KW - Femtosecond laser ablation KW - Optical breakdown KW - Time-resolved measurements KW - Semiconductor KW - Indium phosphide PY - 2010 SN - 1454-4164 VL - 12 IS - 3 SP - 421 EP - 426 PB - INOE & INFM CY - Bucharest AN - OPUS4-21082 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Rosenfeld, A. A1 - Grebing, C. A1 - Steinmeyer, G. A1 - Mailman, N. A1 - Botton, G.A. A1 - Haugen, H.K. T1 - Ablation and structural changes induced in InP surfaces by single 10 fs laser pulses in air JF - Journal of applied physics N2 - Ablation of single-crystalline (100) indium phosphide wafer surfaces with single 10 fs Ti:sapphire laser pulses in air has been studied by means of complementary cross-sectional transmission electron microscopy, scanning force microscopy, and optical microscopy. A local protrusion of ~70 nm height is generated within the ablation craters for fluences exceeding 0.78 J/cm². This morphological feature has been studied in detail, revealing the material structure of the laser-affected zone and its spatial extent. The resolidified layer (60-200 nm thick) consists of polycrystalline grains (5-15 nm diameter) and is covered by an ~10 nm thick amorphous top layer. Interestingly, the sharp boundary of the solidified layer to the unaffected crystal underneath exhibits a Gaussian-like shape and does not follow the shape of the surface topography. Evidence is presented that the central crater protrusion is formed by near-surface optical breakdown, and that the absorption in the material transiently changes during the femtosecond-laser pulse. KW - Femtosecond laser ablation KW - Optical breakdown KW - Transmission electron microscopy KW - Semiconductor KW - Indium phosphide KW - Scanning force microscopy KW - Time-resolved measurements PY - 2009 UR - http://link.aip.org/link/?JAPIAU/106/074907/1 DO - https://doi.org/10.1063/1.3236630 SN - 0021-8979 SN - 1089-7550 VL - 106 SP - 074907-1 - 074907-7 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-20083 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -