TY - JOUR A1 - Häusler, Ines A1 - Moeck, P. A1 - Volz, K. A1 - Neumann, W. T1 - Orientation relationships of Mn0.75Ga0.25As crystallites on and within GaAs determined by scanning nano beam electron diffraction JF - Crystal Research and Technology N2 - Mn0.75Ga0.25As crystallites, partially embedded on and fully embedded within a single crystalline matrix of GaAs formed during metal organic vapor phase epitaxy (MOVPE) of Mn-rich (Mn,Ga)As on (001) oriented GaAs wafers. Phase and orientation analysis of these crystallites were performed with scanning nano beam electron diffraction (SNBED). The investigation of plan-view specimens using a liquid nitrogen cooling stage enabled the phase and orientation analysis of partially embedded ferromagnetic a-phase particles. In all specimens the following two orientation relationships (O) between the a-phase particles and the GaAs matrix were determined: O1: [1-2.0] Mn0.75Ga0.25As || [110] GaAs and [10.2] Mn0.75Ga0.25As || [-110] GaAs O2: [10.2] Mn0.75Ga0.25As || [110] GaAs and [1-2.0] Mn0.75Ga0.25As || [-110] GaAs. The study of cross-sectional specimens enabled the analysis of fully embedded crystallites. It could be unambiguously detected that a fully embedded crystallite has the structure of the atomically ordered monoclinic β' phase. The β' phase crystallite consists of two domains which are related in twin positions to each other. The orientation relations of the different particles are illustrated by color coded stereographic projections. KW - (Mn,Ga)As crystallites KW - Scanning nano beam electron diffraction KW - Crystal phase determination KW - Orientation mapping KW - STEM/TEM imaging PY - 2017 DO - https://doi.org/10.1002/crat.201600261 SN - 1521-4079 SN - 0232-1300 VL - 52 IS - 1, Special Issue: Anniversary Issue: 50 Years of Crystal Research & Technology SP - 138 EP - 145 PB - Wiley AN - OPUS4-38939 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Häusler, Ines A1 - Moeck, P. A1 - Volz, K. A1 - Neumann, W. T1 - Atomically ordered (Mn,Ga) As crystallites on and within GaAs JF - Crystal research and technology N2 - Metal organic vapor phase epitaxy (MOVPE) of Mn-rich (Mn,Ga)As on (001) oriented GaAs wafers resulted in atomically ordered (Mn,Ga)As crystallites of two morphological kinds, partially embedded on the wafer surface and fully embedded within the single crystalline matrix. While the former were apparently free of defects (other than unavoidable point defects), the latter contained two domains separated by a grain boundary. Since atomic ordering can be modeled by space group symmetry descent considerations (Bärnighausen trees) that start with the space group of the known crystallographic phases of random (Mn,Ga)As alloys with specified chemical compositions, reasonable structure hypotheses have been derived for two atomically ordered Mn0.75Ga0.25As phases that we call the trigonal α' and the monoclinic β' phases. The implications of these structure hypotheses are in agreement with the results of a range of scanning transmission electron microscopy (STEM) and parallel illumination electron diffraction (ED) studies that include quantitative energy dispersive X-ray spectroscopy, X-ray spectroscopic imaging, as well nanobeam diffraction and high angle precession ED. The coexistence of two domains within the fully embedded crystallites is predicted by the corresponding Bärnighausen tree and observed experimentally for the fully embedded crystallites. KW - (Mn,Ga) As crystallites KW - Bärninghausen symmetry trees KW - Precession electron diffraction KW - Scanning nanobeam mapping KW - STEM/TEM imaging PY - 2015 DO - https://doi.org/10.1002/crat.201500310 SN - 0023-4753 SN - 1521-4079 SN - 0232-1300 VL - 50 IS - 12 SP - 967 EP - 973 PB - Wiley-VCH Verlag GmbH & Co. KGaA CY - Weinheim AN - OPUS4-35125 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -