TY - JOUR A1 - Hempel, M. A1 - Ziegler, Mathias A1 - Schwirzke-Schaaf, S. A1 - Tomm, J.W. A1 - Jankowski, D. A1 - Schröder, D. T1 - Spectroscopic analysis of packaging concepts for high-power diode laser bars N2 - Double-side cooled high-power diode laser bars packaged by different techniques on different types of passive heat sinks are analyzed in terms of packaging-induced strain. Reference data from standard devices being single-side cooled only and packaged by conventional soft and hard soldering are also presented. Thermal profiling across the devices complements the results. The most suitable packaging architecture and technique for double-side cooled bars is identified. Measurements of the laser emission near field and electroluminescence pattern provide direct reference to the functionality of the devices. Furthermore, a type of cross calibration of the methods used for strain analysis is made, since all techniques are applied to the same set of bars. This involves micro photoluminescence, micro Raman, and degree-of-polarization electroluminescence spectroscopy. KW - Spectroscopy KW - Semiconductor laser KW - Thermography KW - High-power diode lasers KW - Non-destructive testing PY - 2012 U6 - https://doi.org/10.1007/s00339-012-6799-4 SN - 0947-8396 VL - 107 IS - 2 SP - 371 EP - 377 PB - Springer CY - Berlin AN - OPUS4-25789 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hempel, M. A1 - Ziegler, Mathias A1 - Tomm, J.W. A1 - Elsaesser, T. A1 - Michel, N. A1 - Krakowski, M. T1 - Time-resolved analysis of catastrophic optical damage in 975 nm emitting diode lasers N2 - Catastrophic optical damage (COD) is analyzed during single current pulse excitation of 975 nm emitting diode lasers. Power transients and thermal images are monitored during each pulse. The COD process is unambiguously related to the occurrence of a “thermal flash” of Planck’s radiation. We observe COD to ignite multiple times in subsequent pulses. Thermography allows for tracing a spatial motion of the COD site on the front facet of the devices. The time constant of power decay after the onset of COD has values from 400 to 2000 ns, i.e., an order of magnitude longer than observed for shorter-wavelength devices. KW - Semiconductor laser KW - Thermography KW - Catastrophic optical damage KW - High-power diode lasers PY - 2010 U6 - https://doi.org/10.1063/1.3456388 SN - 0003-6951 SN - 1077-3118 VL - 96 IS - 251105 SP - 1 EP - 3 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-21672 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Tomm, J.W. A1 - Ziegler, Mathias A1 - Hempel, M. A1 - Elsaesser, T. T1 - Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers N2 - COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices. KW - Semiconductor laser KW - Thermography KW - Catastrophic optical damage KW - High-power diode lasers KW - Destructive testing KW - Non-destructive testing PY - 2011 U6 - https://doi.org/10.1002/lpor.201000023 SN - 1863-8880 VL - 5 IS - 3 SP - 422 EP - 441 PB - Wiley-VCH CY - Weinheim AN - OPUS4-23624 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Ziegler, Mathias A1 - Hempel, M. A1 - Larsen, H. E. A1 - Tomm, J. W. A1 - Andersen, P. E. A1 - Clausen, S. A1 - Elliott, S. N. A1 - Elsaesser, T. T1 - Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage N2 - The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns time scale which is determined by the accumulation of excess energy absorbed from the optical output. We identify regimes in which COD is avoided by the proper choice of operation parameters. KW - Semiconductor laser KW - Thermography KW - Catastrophic optical damage KW - High-power diode lasers PY - 2010 U6 - https://doi.org/10.1063/1.3463039 SN - 0003-6951 SN - 1077-3118 VL - 97 IS - 021110 SP - 1 EP - 3 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-21741 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -