TY - JOUR A1 - Pagano, R. A1 - Ziegler, Mathias A1 - Tomm, J.W. A1 - Esquivias, I. A1 - Tijero, J.M.G. A1 - O'Callaghan, J.R. A1 - Michel, N. A1 - Krakowski, M. A1 - Corbett, B. T1 - Two-dimensional carrier density distribution inside a high power tapered laser diode JF - Applied physics letters N2 - The spontaneous emission of a GaAs-based tapered laser diode emitting at λ = 1060 nm was measured through a window in the transparent substrate in order to study the carrier density distribution inside the device. It is shown that the tapered geometry is responsible for nonuniform amplification of the spontaneous/stimulated emission which in turn influences the spatial distribution of the carriers starting from below threshold. The carrier density does not clamp at the lasing threshold and above it the device shows lateral spatial hole-burning caused by high stimulated emission along the cavity center. KW - Carrier density KW - Gallium arsenide KW - III-V semiconductors KW - Indium compounds KW - Laser cavity resonators KW - Optical hole burning KW - Quantum well lasers KW - Stimulated emission KW - Superradiance PY - 2011 DO - https://doi.org/10.1063/1.3596445 SN - 0003-6951 SN - 1077-3118 VL - 98 SP - 221110-1 EP - 221110-3 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-23873 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -