TY - CONF A1 - Kormunda, M. A1 - Pavlik, J. A1 - Hertwig, Andreas A1 - Nooke, Alida A1 - Krause, Andreas A1 - Beck, Uwe A1 - Steinbach, J. T1 - Magnetron deposited SnO2:Fe films with controlled morphology and a SPR sensor application T2 - PSE 2012 T2 - PSE 2012 CY - Garmisch-Partenkirchen, Germany DA - 2012-09-10 PY - 2012 AN - OPUS4-26554 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Kormunda, M. A1 - Hertwig, Andreas A1 - Beck, Uwe A1 - Fischer, Daniel T1 - Study of magnetron sputtering deposited ultrathin FeSnOx films for Surface Plasmon Resonance sensors towards gas sensing applications N2 - In this study, series of coatings with the goal of sensitising gold SPR sensors towards CO, NH4, etc. were prepared. To better understand the mechanism behind the sensitizing effect and to enable the targeted production of optimized layers, the wide range of coatings was studied by multiple methods from spectroscopic ellipsometry for their dielectric function, by XPS for chemical composition and SEM, TEM to determine their microscopic structure. The coatings were deposited at inert Ar gas and reactive Ar/O2 gas mixture by RF magnetron sputtering or DC pulsed magnetron sputtering with settable RF bias on the substrates. The plasma processes were monitors by mass spectrometry. The metal oxide coatings in SPR sensors have to be prepared reproducible with thickness about 5 nm therefore lower deposition rate conditions were advantages. T2 - THE 14th INTERNATIONAL SYMPOSIUM ON SPUTTERING & PLASMA PROCESSES,ISSP 2017 CY - Kanazawa, Japan DA - 05.07.2017 KW - Surface Plasmon Resonance KW - Magnetron sputtering KW - FeSnOx PY - 2017 AN - OPUS4-43539 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Kormunda, M. A1 - Hertwig, Andreas A1 - Rysanek, P. A1 - Ivanov, L. T1 - Optical and Electrical Properties of reactive/nonreactive Magnetron Deposited SnZnOxCoatings Annealed at Various Temperatures N2 - ZnSnOx coatings were deposited from two 2in magnetron targets made of ZnO and SnO2 connected to DC pulsed and RF power supplies, respectively. The pure Ar and reactive gas mixture Ar/O2 were used. DC pulsed power applied on ZnO target was kept constant 50W 50kHz, 20% d.c. and the RF power applied on SnO2 target was set to values from 0W (pure ZnO deposited) up to 150W (up to 8 at.% of Sn in films). The deposited films were investigated by multiple techniques as deposited at RT as well as after annealing at temperatures 200o C and 450o C. The lower annealing temperature is still compatible with many of common polymeric substrates. The amount of Sn in the films is proportional to applied RF power on SnO2 target. But there is also significant influence of the post Deposition annealing on the film compositions. The ratio Zn/Sn is reduced by the annealing process. Therefore the annealing is promoting the migration of Sn toward the surface and Zn to inside. Moreover the films deposited in oxygen rich reactive gas mixture does not reduces the resistivity with added Sn in contrary to films deposited in Ar where the resistivity was reduced by 5 orders of magnitudes. The plasma parameters were investigated and mean energies of dominant species were in DC pulsed only about 3eV and DC + RF powered plasma up to 15eV. The expected higher energetic particles in the RF influenced plasma deliver an additional energy to the growing film. Therefore, we observed systematic differences between refractive indexes in the films deposited with low RF powered SnO2 magnetron at RT and post-annealed at 200 ° and practically no difference between RT and post-annealed film at higher RF power above 50 W. The XRD results proved the transitions from an amorphous to more crystalline structure by post-annealing of the films. T2 - PSE 2018 - 16th Conference on Plasma Surface Engineering CY - Garmisch-Partenkirchen, Germany DA - 17.09.2018 KW - Reactive sputtering KW - Plasma diagnostics KW - Optical films KW - TCO PY - 2018 AN - OPUS4-46347 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -