TY - JOUR A1 - Macková, A. A1 - Jagerová, A. A1 - Lailik, O. A1 - Miksová, R. A1 - Poustka, D. A1 - Mistrík, J. A1 - Holý, V. A1 - Schütter, Jan David A1 - Kentsch, U. A1 - Marvan, P. A1 - Azarov, A. A1 - Galeckas, A. T1 - Combined Au/Ag nanoparticle creation in ZnO nanopillars by ion implantation for optical response modulation and photocatalysis JF - Applied Surface Science N2 - ZnO nanopillars were implanted with Au-400 keV and Ag-252 keV ions with ion fluences from 1 × 10^15 cm^2 to 1 × 10^16 cm^2. We compared ZnO nanopillars solely implanted with Au-ions and dually-implanted with Au and Ag-ions. Rutherford Back-Scattering spectrometry (RBS) confirmed Ag and Au embedded in ZnO nanopillar layers in a reasonable agreement with theoretical calculations. A decreasing thickness of the ZnO nanopillar layer was evidenced with the increasing ion implantation fluences. Spectroscopic Ellipsometry (SE) showed a decrease of refractive index in the nanopillar parts with embedded Au, Ag-ions. XRD discovered vertical domain size decreasing with the proceeding radiation damage accumulated in ZnO nanopillars which effect was preferably ascribed to Au-ions. SE and diffuse reflectance spectroscopy (DRS) showed optical activity of the created nanoparticles at wavelength range 500 – 600 nm and 430 – 700 nm for the Au-implanted and Au, Ag-implanted ZnO nanopillars, respectively. Photoluminescence (PL) features linked to ZnO deep level emission appear substantially enhanced due to plasmonic interaction with metal nanoparticles created by Ag, Au-implantation. Photocatalytic activity seems to be more influenced by the nanoparticles presented in the layer rather than the surface morphology. Dual implantation with Ag, Au-ions enhanced optical activity to a larger extent without significant morphology deterioration as compared to the solely Au-ion implanted nanopillars. KW - ZnO nanopillars KW - Au/Ag nanoparticles, KW - Ion implantation KW - SPR KW - Doped ZnO nanostructures PY - 2022 DO - https://doi.org/10.1016/j.apsusc.2022.155556 SN - 0169-4332 VL - 610 SP - 1 EP - 13 PB - Elsevier B.V. AN - OPUS4-56306 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Reier, T. A1 - Schultze, J. W. A1 - Österle, Werner A1 - Buchal, C. T1 - Nucleation and growth of AlN nanocrystallites prepared by N+2 implantation JF - Surface and Coatings Technology N2 - The formation of AlN films prepared by N+2 ion implantation into aluminium was investigated using X-ray and Auger photoelectron spectroscopy ( XPS, AES) as well as cross-sectional transmission electron microscopy (XTEM). After 100-keV N+2 implantation of low doses (1×1017 cm−2), the formation of hexagonal AlN nanocrystals (crystal size <5 nm, Ncrystal=1017 cm−3) was observed. Their orientation is strongly correlated with the aluminium matrix. With the dose increasing to 3×1017 cm−2, crystal growth follows, finally forming a homogeneous AlN-layer. Furthermore, the diffraction patterns show an increasing amount of misorientation with increasing dose. From the crystal size distribution, we conclude that continuous nucleation takes place. Samples implanted with an energy of 3 keV exhibit analogous behaviour. Nitride growth was further investigated using microstructured AlN formed by 3-keV implantation through movable TEM-masks (structure size: 15–150 mm). In the case of high N+2 doses (D&5×1017 cm−2), AlN is detected by AES in the shielded area at a distance of up to 10 mm from the exposed region. The Diffusion coefficient was calculated to be 10−10 cm2 s−1. The formation of AlN proceeds in two steps. After a continuous nucleation, diffusion-assisted Crystal growth takes place until a homogeneous AlN layer results. KW - Aluminium nitride KW - Ion implantation KW - Nanocrystallites KW - Surface analysis KW - XTEM PY - 1998 SN - 0257-8972 VL - 103-104 SP - 415 EP - 420 PB - Elsevier AN - OPUS4-38539 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Reier, T. A1 - Schultze, J.W. A1 - Österle, Werner A1 - Buchal, Ch. T1 - The growth of aligned AIN-nanocrystals in aluminium after nitrogen-ion implantation at 330 K JF - Thin solid films KW - AIN KW - Al2O3 KW - Ion implantation KW - Diffusion KW - Nanocrystals PY - 2001 SN - 0040-6090 VL - 385 SP - 29 EP - 35 PB - Elsevier CY - Amsterdam AN - OPUS4-7643 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -