TY - JOUR A1 - Moritz, W. A1 - Krause, S. A1 - Roth, U. A1 - Klimm, D. A1 - Lippitz, Andreas T1 - Re-activation of an all solid state oxygen sensor JF - Analytica chimica acta N2 - The silicon based semiconductor structure Si/SiO2/Si3N4/LaF3/Pt can be used as a potentiometric oxygen sensor working at room temperature. A thermal re-activation can be applied to overcome the earlier disadvantage of an increase in response time with continuous use. Using the Pt gate electrode as a resistive heater, very short electrical high-power pulses can be applied. A heating time as short as 300 ns was sufficient for the re-activation of the sensor. This way, only the sensitive thin layer system LaF3/Pt was heated, and the whole sensor was at room temperature immediately after heating. Impedance spectroscopy, X-ray photoelectron spectroscopy (XPS) and quadruple mass spectrometric (QMS)–thermogravimetry (TG) were used to investigate the mechanism of deterioration in dynamic sensor behaviour and re-activation. The formation of hydrated carbonate and the desorption of CO2 and H2O have been shown to be the causes. KW - Chemical sensor KW - Thermal treatment KW - Activation KW - LaF3 KW - Pt PY - 2001 DO - https://doi.org/10.1016/S0003-2670(01)00993-X SN - 0003-2670 SN - 1873-4324 SN - 0378-4304 VL - 437 SP - 183 EP - 190 PB - Elsevier CY - Amsterdam AN - OPUS4-6836 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -