<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>42016</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>Article 10916, 1</pageFirst>
    <pageLast>10</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>7</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction</title>
    <abstract language="eng">Advanced structural characterisation techniques which are rapid to use, non-destructive and structurally definitive on the nanoscale are in demand, especially for a detailed understanding of extended-defects and their influence on the properties of materials. We have applied the electron&#13;
backscatter diffraction (EBSD) technique in a scanning electron microscope to non-destructively&#13;
characterise and quantify antiphase domains (APDs) in GaP thin films grown on different (001)Si substrates with different offcuts. We were able to image and quantify APDs by relating the asymmetrical intensity distributions observed in the EBSD patterns acquired experimentally and comparing the same with the dynamical electron diffraction simulations. Additionally mean angular error maps were also plotted using automated cross-correlation based approaches to image APDs.&#13;
Samples grown on substrates with a 4° offcut from the [110] do not show any APDs, whereas samples grown on the exactly oriented substrates contain APDs. The procedures described in our work can be&#13;
adopted for characterising a wide range of other material systems possessing non-centrosymmetric point groups.</abstract>
    <parentTitle language="eng">Scientific Reports</parentTitle>
    <identifier type="issn">2045-2322</identifier>
    <identifier type="urn">urn:nbn:de:kobv:b43-420167</identifier>
    <enrichment key="date_peer_review">21.09.2017</enrichment>
    <licence>Creative Commons - Namensnennung 3.0</licence>
    <author>G. Naresh-Kumar</author>
    <author>A. Vilalta-Clemente</author>
    <author>H. Jussila</author>
    <author>Aimo Winkelmann</author>
    <author>Gert Nolze</author>
    <author>S. Vespucci</author>
    <author>S. Nagarajan</author>
    <author>A. J. Wilkinson</author>
    <author>C. Trager-Cowan</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Polarity</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Semiconductor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Antiphase boundary</value>
    </subject>
    <collection role="ddc" number="543">Analytische Chemie</collection>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="literaturgattung" number="">Verlagsliteratur</collection>
    <collection role="fulltextaccess" number="">Datei für die Öffentlichkeit verfügbar ("Open Access")</collection>
    <collection role="unnumberedseries" number="">Wissenschaftliche Artikel der BAM</collection>
    <thesisPublisher>Bundesanstalt für Materialforschung und -prüfung (BAM)</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-bam/files/42016/Naresh_17.pdf</file>
  </doc>
  <doc>
    <id>42206</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>330</pageFirst>
    <pageLast>346</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>267</volume>
    <type>article</type>
    <publisherName>Wiley &amp; Sons, Ltd.</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Diffraction effects and inelastic electron transport in angle-resolved microscopic imaging applications</title>
    <abstract language="eng">We analyse the signal formation process for scanning electron microscopic imaging applications on crystalline specimens. In accordance with previous investigations, we find nontrivial effects of incident beam diffraction on the backscattered electron distribution in energy and momentum. Specifically, incident beam diffraction causes angular changes of the backscattered electron distribution which we identify as the dominant mechanism underlying pseudocolour orientation imaging using multiple, angle-resolving detectors. Consequently, diffraction effects of the incident beam and their impact on the subsequent coherent and incoherent electron transport need to be taken into account for an in-depth theoretical modelling of the energy- and momentum distribution of electrons backscattered from crystalline sample regions. Our findings have implications for the level of theoretical detail that can be necessary for the interpretation of complex imaging modalities such as electron channelling contrast imaging (ECCI) of defects in crystals. If the solid angle of detection is limited to specific regions of the backscattered electron momentum distribution, the image contrast that is observed in ECCI and similar applications can be strongly affected by incident beam diffraction and topographic effects from the sample surface. As an application, we demonstrate characteristic changes in the resulting images if different properties of the backscattered electron distribution are used for the analysis of a GaN thin film sample containing dislocations.</abstract>
    <parentTitle language="eng">Journal of Microscopy</parentTitle>
    <identifier type="doi">10.1111/jmi.12571</identifier>
    <identifier type="urn">urn:nbn:de:kobv:b43-422063</identifier>
    <identifier type="issn">0022-2720</identifier>
    <enrichment key="date_peer_review">28.09.2017</enrichment>
    <licence>Creative Commons - Namensnennung 3.0</licence>
    <author>Aimo Winkelmann</author>
    <author>Gert Nolze</author>
    <author>S. Vespucci</author>
    <author>N.-K. Gunsekar</author>
    <author>C. Trager-Cowan</author>
    <author>A. Vilalta-Clemente</author>
    <author>A. J. Wilkinson</author>
    <author>M. Voss</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>EBSD</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Channeling-in</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Background processing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Center of mass</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Backscattered electrons</value>
    </subject>
    <collection role="ddc" number="543">Analytische Chemie</collection>
    <collection role="literaturgattung" number="">Verlagsliteratur</collection>
    <collection role="fulltextaccess" number="">Datei für die Öffentlichkeit verfügbar ("Open Access")</collection>
    <collection role="unnumberedseries" number="">Wissenschaftliche Artikel der BAM</collection>
    <thesisPublisher>Bundesanstalt für Materialforschung und -prüfung (BAM)</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-bam/files/42206/Winkelmann_17.pdf</file>
  </doc>
</export-example>
