<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>38539</id>
    <completedYear/>
    <publishedYear>1998</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>415</pageFirst>
    <pageLast>420</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>103-104</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Nucleation and growth of AlN nanocrystallites prepared by N+2 implantation</title>
    <abstract language="eng">The formation of AlN films prepared by N+2 ion implantation into aluminium was investigated using X-ray and Auger photoelectron spectroscopy ( XPS, AES) as well as cross-sectional transmission electron microscopy (XTEM). After 100-keV N+2 implantation of low doses (1×1017 cm−2), the formation of hexagonal AlN nanocrystals (crystal size &lt;5 nm, Ncrystal=1017 cm−3) was observed. Their orientation is strongly correlated with the aluminium matrix. With the dose increasing to 3×1017 cm−2, crystal growth follows, finally forming a homogeneous AlN-layer. Furthermore, the diffraction patterns show an increasing amount of misorientation with increasing dose. From the crystal size distribution, we conclude that continuous nucleation takes place. Samples implanted with an energy of 3 keV exhibit analogous behaviour. Nitride growth was further investigated using microstructured AlN formed by 3-keV implantation through movable TEM-masks (structure size: 15–150 mm).&#13;
In the case of high N+2 doses (D&amp;5×1017 cm−2), AlN is detected by AES in the shielded area at a distance of up to 10 mm from the exposed region. The Diffusion coefficient was calculated to be 10−10 cm2 s−1. The formation of AlN proceeds in two steps.&#13;
After a continuous nucleation, diffusion-assisted Crystal growth takes place until a homogeneous AlN layer results.</abstract>
    <parentTitle language="eng">Surface and Coatings Technology</parentTitle>
    <identifier type="issn">0257-8972</identifier>
    <author>T. Reier</author>
    <author>J. W. Schultze</author>
    <author>Werner Österle</author>
    <author>C. Buchal</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Aluminium nitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ion implantation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nanocrystallites</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Surface analysis</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>XTEM</value>
    </subject>
    <collection role="ddc" number="543">Analytische Chemie</collection>
    <collection role="literaturgattung" number="">Verlagsliteratur</collection>
    <collection role="fulltextaccess" number="">Datei im Netzwerk der BAM verfügbar ("Closed Access")</collection>
  </doc>
</export-example>
