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    <title language="eng">Using imaging ellipsometry to understand femtosecond laser materials processing of group IV materials</title>
    <abstract language="eng">Laser materials processing is an important tool for creating and shaping new materials. Laser machining, especially with ultrashort pulses offers the modification of surfaces, thin coatings, and bulk materials with an unprecedented precision and control. The most desired feature of pulsed laser processing in the femtosecond range is that the heat-affected zone in the irradiated material will be extremely small. To better understand the mechanisms involved during laser irradiation, it is important to analyse the outcome of light-matter interaction with spectroscopic methods. Ellipsometry, especially spectroscopic imaging ellipsometry (SIE), has become an important tool for this in recent times, as it gives access to local layer thicknesses, materials dielectric functions, and features like changes in surface roughness.&#13;
This work includes an overview over our recent studies examining near-infrared fs-laser surface processing of different group IV materials. The superficial phase change of silicon from crystalline to amorphous has been investigated in the past as the result of laser processing strongly depends on the crystal orientation. Moreover, SIE is capable of determining the&#13;
properties of buried a-Si interfaces with micrometer lateral and sub-nanoneter vertical precision. Additionally, the growth of native and laser-induced oxides can be revealed.</abstract>
    <enrichment key="eventName">ICSE10 - 10th International Conference on Spectroscopic Ellipsometry</enrichment>
    <enrichment key="eventPlace">Boulder, CO, USA</enrichment>
    <enrichment key="eventStart">08.06.2025</enrichment>
    <enrichment key="eventEnd">13.06.2025</enrichment>
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    <author>Deniz Hülagü</author>
    <author>Kenta Hirahara</author>
    <author>Daniel Fischer</author>
    <author>Camilo Florian</author>
    <author>Robert Schusterbauer</author>
    <author>Elena Ermilova</author>
    <author>Jörg Krüger</author>
    <author>Andreas-Neil Unterreiner</author>
    <author>Jörn Bonse</author>
    <author>Andreas Hertwig</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Laser surface ablation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Amorphous Carbon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Correlative Imaging Ellipsometry</value>
    </subject>
    <collection role="ddc" number="543">Analytische Chemie</collection>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="institutes" number="">6 Materialchemie</collection>
    <collection role="institutes" number="">6.1 Oberflächen- und Dünnschichtanalyse</collection>
    <collection role="institutes" number="">6.2 Material- und Oberflächentechnologien</collection>
    <collection role="themenfelder" number="">Material</collection>
    <collection role="themenfelder" number="">Chemie und Prozesstechnik</collection>
    <collection role="themenfelder" number="">Chemische Charakterisierung und Spurenanalytik</collection>
    <collection role="fulltextaccess" number="">Datei im Netzwerk der BAM verfügbar ("Closed Access")</collection>
    <collection role="literaturgattung" number="">Präsentation</collection>
    <collection role="themenfelder" number="">Advanced Materials</collection>
    <collection role="themenfelder" number="">Materialdesign</collection>
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  <doc>
    <id>61782</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>17</pageLast>
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    <edition/>
    <issue>12</issue>
    <volume>130</volume>
    <type>article</type>
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    <title language="eng">A multi-method study of femtosecond laser modification and ablation of amorphous hydrogenated carbon coatings</title>
    <abstract language="eng">e present a study on femtosecond laser treatment of amorphous hydrogen-containing carbon coatings (a-C:H). The coatings were deposited on silicon wafers by a plasma-assisted chemical vapour deposition (PA-CVD), resulting in two different types of material with distinct properties (referred to as “absorbing” and “semi-transparent” coatings in the following). &#13;
The samples were laser-treated with single fs-laser pulses (800 nm center wavelength, 35 fs pulse duration) in the ablative regime. Through a multi-method approach using topometry, Raman spectroscopy, and spectroscopic imaging ellipsometry, we can identify zones and thresholds of diferent fuence dependent efects and have access to the local dielectric function. &#13;
The two coating materials react signifcantly diferent upon laser treatment. We determined the (non-ablative) modifcation threshold fuence for the absorbing coating as 3.6 × 10−2 Jcm−2 and its ablation threshold as 0.22 Jcm−2. The semi-transparent coating does not show such a low-fuence modifcation but exhibits a characteristic interference-based intra-flm ablation mechanism with two distinguishable ablation thresholds at 0.25 and 0.28 Jcm−2,  respectively. The combination of tailored layer materials and correlative imaging spectroscopic methods delivers new insights into the behaviour of materials when treated with ultrashort-pulse laser radiation</abstract>
    <parentTitle language="eng">Applied Physics A</parentTitle>
    <identifier type="doi">10.1007/s00339-024-07980-z</identifier>
    <identifier type="urn">urn:nbn:de:kobv:b43-617829</identifier>
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Tiewald, Dielectric Function Modeling, in Spectroscopic Ellipsometry for Photovoltaics\u202f: Volume 1: Fundamental Principles and Solar Cell Characterization. ed. by R.W. Collins, H. Fujiwara (Springer International Publishing, NY, 2018), pp.115\u2013153"},{"issue":"4","key":"7980_CR48","doi-asserted-by":"publisher","first-page":"715","DOI":"10.1002\/pssa.200777754","volume":"205","author":"B Johs","year":"2008","unstructured":"B. Johs, J.S. Hale, Dielectric function representation by B-splines. Phys. Status Sol. A 205(4), 715\u2013719 (2008). https:\/\/doi.org\/10.1002\/pssa.200777754","journal-title":"Phys. Status Sol. A"},{"issue":"1","key":"7980_CR49","doi-asserted-by":"publisher","first-page":"014001","DOI":"10.1116\/1.5126110","volume":"38","author":"J Mohrmann","year":"2020","unstructured":"J. Mohrmann et al., Application of a B-spline model dielectric function to infrared spectroscopic ellipsometry data analysis. J. Vac. Sci. Technol. B 38(1), 014001 (2020). https:\/\/doi.org\/10.1116\/1.5126110","journal-title":"J. Vac. Sci. Technol. B"},{"issue":"1","key":"7980_CR50","doi-asserted-by":"publisher","first-page":"89","DOI":"10.1007\/s00339-005-3460-5","volume":"83","author":"G Daminelli","year":"2005","unstructured":"G. Daminelli, S. Pentzien, A. Hertwig, J. Kr\u00fcger, Influence of film thickness on laser ablation of hydrogenated amorphous carbon films. Appl. Phys. A 83(1), 89\u201394 (2005). https:\/\/doi.org\/10.1007\/s00339-005-3460-5","journal-title":"Appl. Phys. A"}],"container-title":["Applied Physics A"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s00339-024-07980-z.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s00339-024-07980-z\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s00339-024-07980-z.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,11,6]],"date-time":"2024-11-06T05:08:30Z","timestamp":1730869710000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s00339-024-07980-z"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,11,6]]},"references-count":50,"journal-issue":{"issue":"12","published-print":{"date-parts":[[2024,12]]}},"alternative-id":["7980"],"URL":"http:\/\/dx.doi.org\/10.1007\/s00339-024-07980-z","relation":{},"ISSN":["0947-8396","1432-0630"],"issn-type":[{"value":"0947-8396","type":"print"},{"value":"1432-0630","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,11,6]]},"assertion":[{"value":"27 June 2024","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"7 October 2024","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"6 November 2024","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Declaration"}},{"value":"The authors declare no competing interests.","order":2,"name":"Ethics","group":{"name":"EthicsHeading","label":"Competing Interests"}}],"article-number":"860"}}</enrichment>
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    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Kenta Hirahara</author>
    <author>Jörn Bonse</author>
    <author>Jörg Krüger</author>
    <author>Matthias Weise</author>
    <author>Elena Ermilova</author>
    <author>Robert Schusterbauer</author>
    <author>Andreas-Neil Unterreiner</author>
    <author>Andreas Hertwig</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Amorphous Hydrogenated Carbon Coatings</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Correlative Imaging Measurement Techniques</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Hybrid Metrology</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Imaging Spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Spectroscopic Ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ultra-short Pulse Laser Materials Processing</value>
    </subject>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
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    <title language="eng">Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H-SiC layers</title>
    <abstract language="eng">Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control.</abstract>
    <parentTitle language="eng">Journal of the European Optical Society-Rapid Publications</parentTitle>
    <identifier type="doi">10.1051/jeos/2023018</identifier>
    <identifier type="issn">1990-2573</identifier>
    <identifier type="urn">urn:nbn:de:kobv:b43-574209</identifier>
    <enrichment key="eventName">EOS Annual Meeting (EOSAM 2022)</enrichment>
    <enrichment key="eventPlace">Porto</enrichment>
    <enrichment key="eventStart">12.09.2022</enrichment>
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    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="date_peer_review">12.06.2023</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Elena Ermilova</author>
    <author>Matthias Weise</author>
    <author>Andreas Hertwig</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Imaging ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>White light interference microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>4H–SiC</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Defects</value>
    </subject>
    <collection role="ddc" number="543">Analytische Chemie</collection>
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    <collection role="institutes" number="">6.1 Oberflächen- und Dünnschichtanalyse</collection>
    <collection role="themenfelder" number="">Chemie und Prozesstechnik</collection>
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    <file>https://opus4.kobv.de/opus4-bam/files/57420/jeos20230010.pdf</file>
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    <volume>2023/D5</volume>
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    <title language="eng">Optical and Tactile Measurements on SiC Sample Defects</title>
    <abstract language="eng">The different defect types on SiC samples are measured with various measurement methods including optical and tactile methods. The defect types investigated include particles, carrots and triangles and they are analyzed with imaging ellipsometry, coherent Fourier scatterometry and atomic force microscopy. Each of these methods measures different properties of the defects and they all together contribute to a complete analysis.</abstract>
    <parentTitle language="eng">SMSI 2023 Conference – Sensor and Measurement Science International</parentTitle>
    <identifier type="isbn">978-3-9819376-8-8</identifier>
    <identifier type="doi">10.5162/SMSI2023/D5.2</identifier>
    <identifier type="urn">urn:nbn:de:kobv:b43-593397</identifier>
    <enrichment key="eventName">SMSI 2023 - Sensor and Measurement Science International</enrichment>
    <enrichment key="eventPlace">Nuremberg, Germany</enrichment>
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    <licence>Allgemeines Deutsches Urheberrecht</licence>
    <author>Jana Grundmann</author>
    <author>Elena Ermilova</author>
    <author>Andreas Hertwig</author>
    <author>Petr Klapetek</author>
    <author>Silvania F. Pereira</author>
    <author>Jila Rafighdoost</author>
    <author>Bernd Bodermann</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Defects</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon carbide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Imaging ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic force microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Coherent Fourier scatterometry</value>
    </subject>
    <collection role="ddc" number="543">Analytische Chemie</collection>
    <collection role="institutes" number="">6 Materialchemie</collection>
    <collection role="institutes" number="">6.1 Oberflächen- und Dünnschichtanalyse</collection>
    <collection role="themenfelder" number="">Chemie und Prozesstechnik</collection>
    <collection role="fulltextaccess" number="">Datei für die Öffentlichkeit verfügbar ("Open Access")</collection>
    <collection role="literaturgattung" number="">Graue Literatur</collection>
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    <thesisPublisher>Bundesanstalt für Materialforschung und -prüfung (BAM)</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-bam/files/59339/Optical_Tactile_Meas_SiC_SMSI2023.pdf</file>
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  <doc>
    <id>60954</id>
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    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
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    <title language="eng">Ellipsometrical characterization of poly-dopamine layers considered for technical applications</title>
    <abstract language="eng">Although the organic molecule dopamine (3,4-dihydroxyphenethylamine) is commonly known as the “hormone of happiness”, thin films of poly-dopamine also have interesting technical properties. When produced by dip coating, the self-organizing layers grow in a reproducible thickness of single or multiple molecule monolayers of a few nanometer thickness only. In this work, we introduce a method of determining the layer thickness of poly-dopamine on mirrors for astronomical X-ray telescopes. This work is based on spectroscopic ellipsometry measurements and involves the development of an optical model for the poly-dopamine layers including the dielectric function. Thereby the complex refractive index of the produced layers was determined, covering the range from the ultraviolet to the near infrared spectral region. These measurement results and the corresponding technical challenges are presented in this contribution. Furthermore, an outlook to potential technical applications of this interesting material is given and poly-dopamine layers will make scientist and engineers hopefully happy as an innovative and fascinating technical solution for the future.</abstract>
    <parentTitle language="eng">Organic Electronics and Photonics: Fundamentals and Devices IV</parentTitle>
    <identifier type="doi">10.1117/12.3015281</identifier>
    <identifier type="isbn">978-1-5106-7344-1</identifier>
    <enrichment key="eventName">SPIE PHOTONICS EUROPE</enrichment>
    <enrichment key="eventPlace">Strasbourg. France</enrichment>
    <enrichment key="eventStart">08.04.2024</enrichment>
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    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="date_peer_review">21.10.2024</enrichment>
    <author>Elena Ermilova</author>
    <author>Andreas Hertwig</author>
    <author>Thorsten Döhring</author>
    <author>Eva Stanik</author>
    <author>Vincenzo Cotroneo</author>
    <author>Eugenio Gibertini</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Polydopamine</value>
    </subject>
    <subject>
      <language>eng</language>
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    <title language="eng">Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers</title>
    <abstract language="eng">Recent developments in power electronics require the use of new wide bandgap compound semiconductor. We demonstrate the use of the ellipsometry and white light interference microscopy to detect defects in epitaxially grown SiC layers on SiC substrates. Such hybrid optical metrology methods can be used to better understand the mechanism of the development of the defects as well as their effects on the material´s optoelectronic properties.</abstract>
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    <author>Elena Ermilova</author>
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      <value>Epitaxially grown 4H-SiC layers</value>
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    <title language="eng">Monitoring the Electrochemical Failure of Indium Tin Oxide Electrodes via Operando Ellipsometry Complemented by Electron Microscopy and Spectroscopy</title>
    <abstract language="eng">Transparent conductive oxides such as indium tin oxide (ITO) are standards for thin film electrodes, providing a synergy of high optical transparency and electrical conductivity. In an electrolytic environment, the determination of an inert electrochemical potential window is crucial to maintain a stable material performance during device operation. We introduce operando ellipsometry, combining cyclic voltammetry (CV) with spectroscopic ellipsometry, as a versatile tool to monitor the evolution of both complete optical (i.e., complex refractive index) and electrical properties under wet electrochemical operational conditions. In particular, we trace the degradation of ITO electrodes caused by electrochemical reduction in a pH-neutral, water-based electrolyte environment during electrochemical cycling. With the onset of hydrogen evolution at negative bias voltages, indium and tin are irreversibly reduced to the metallic state, causing an advancing darkening, i.e., a gradual loss of transparency, with every CV cycle, while the conductivity is mostly conserved over multiple CV cycles. Post-operando analysis reveals the reductive (loss of oxygen) formation of metallic nanodroplets on the surface. The reductive disruption of the ITO electrode happens at the solid–liquid interface and proceeds gradually from the surface to the bottom of the layer, which is evidenced by cross-sectional transmission electron microscopy imaging and complemented by energy-dispersive X-ray spectroscopy mapping. As long as a continuous part of the ITO layer remains at the bottom, the conductivity is largely retained, allowing repeated CV cycling. We consider operando ellipsometry a sensitive and nondestructive tool to monitor early stage material and property changes, either by tracing failure points, controlling intentional processes, or for sensing purposes, making it suitable for various research fields involving solid–liquid interfaces and electrochemical activity.</abstract>
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    <title language="eng">Optical and tactile measurements on SiC sample defects</title>
    <abstract language="eng">Abstract. In power electronics, compound semiconductors with large bandgaps, like silicon carbide (SiC), are increasingly being used as material instead of silicon. They have a lot of advantages over silicon but are also intolerant of nanoscale material defects, so that a defect inspection with high accuracy is needed. The different defect types on SiC samples are measured with various measurement methods, including optical and tactile methods. The defect types investigated include carrots, particles, polytype inclusions and threading dislocations, and they are analysed with imaging ellipsometry, coherent Fourier scatterometry (CFS), white light interference microscopy (WLIM) and atomic force microscopy (AFM). These different measurement methods are used to investigate which method is most sensitive for which type of defect to be able to use the measurement methods more effectively. It is important to be able to identify the defects to classify them as critical or non-critical for the functionality of the end product. Once these investigations have been completed, the measurement systems can be optimally distributed to the relevant defects in further work to realize a hybrid analysis of the defects. In addition to the identification and classification of defects, such a future hybrid analysis could also include characterizations, e.g. further evaluation of ellipsometric data by using numerical simulations.</abstract>
    <parentTitle language="eng">Journal of sensors and sensor systems</parentTitle>
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    <identifier type="doi">10.5194/jsss-13-109-2024</identifier>
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They have a lot of advantages over silicon but are also intolerant of nanoscale material defects, so that a defect inspection with high accuracy is needed. The different defect types on SiC samples are measured with various measurement methods, including optical and tactile methods. The defect types investigated include carrots, particles, polytype inclusions and threading dislocations, and they are analysed with imaging ellipsometry, coherent Fourier scatterometry (CFS), white light interference microscopy (WLIM) and atomic force microscopy (AFM). These different measurement methods are used to investigate which method is most sensitive for which type of defect to be able to use the measurement methods more effectively. It is important to be able to identify the defects to classify them as critical or non-critical for the functionality of the end product. Once these investigations have been completed, the measurement systems can be optimally distributed to the relevant defects in further work to realize a hybrid analysis of the defects. 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    <title language="eng">Optical constants of a single AlN layer on Si</title>
    <abstract language="eng">Spectroscopic ellipsometry was used to determine the thickness and dielectric function of a Aluminium Nitride (AlN) layer on a Si wafer. The layer was determined to be 170 nm thick. The layer was provided by AIXTRON and manufactured by means of MOVPE.&#13;
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    <title language="eng">Optical constants of In2O3-SnO2 (Indium tin oxide, ITO)</title>
    <abstract language="eng">Optical constants of In2O3-SnO2 (Indium tin oxide, ITO)&#13;
Minenkov et al. 2024: on glass; n,k 0.191–1.69 µm&#13;
&#13;
Optical constants of In2O3-SnO2 (Indium tin oxide, ITO)&#13;
Minenkov et al. 2024: on Si wafer, top; n,k 0.191–1.69 µm&#13;
&#13;
Optical constants of In2O3-SnO2 (Indium tin oxide, ITO)&#13;
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    <title language="eng">Characterization of electrical properties in microstructured ITO layers using spectroscopic ellipsometry</title>
    <abstract language="eng">Thin indium tin oxide (ITO) layers are essential in optoelectronics due to their good electrical conductivity, optical transparency in the visible and near infrared regions, substrate adherence and chemical stability. They are widely used in photovoltaic cells,  displays, and organic LEDs, and as low emissivity coatings in smart windows and energy-efficient buildings. For nanophotonic devices, understanding the interplay of ITO’s optical and electrical properties is crucial. Electrical resistivity can be tuned by modifying deposition conditions and layer thickness. However, measuring these properties, especially on microstructured surfaces, remains challenging due to the issues like homogeneity and instability during etching. &#13;
&#13;
Spectroscopic ellipsometry (SE), a non-destructive and phase-sensitive optical technique, offers precise measurement of thin film thickness and dielectric properties. In this study, we investigated the layer thickness, optical constants, and sheet resistance of unstructured and microstructured ITO thin layers using SE. Unstructured layers were deposited via DC-magnetron sputtering on silicon (Si) substrates in argon (Ar) atmospheres with varying oxygen (O2) flows. &#13;
&#13;
This multi-technique approach enhances the understanding of ITO layer structuring and provides robust methodologies for correlating optical and electrical properties, advancing metrology for nanotechnology applications and material science. It also opens the pathway to new reference samples and calibration methods for electrical properties involving device-like structured samples.</abstract>
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    <title language="eng">Multimethod Electrical Characterization of Thin Indium Tin Oxide Films: Structuring and Calibration Sample Development for Scanning Probe Microscopy</title>
    <abstract language="eng">Indium tin oxide (ITO), a transparent conductive oxide, is widely used in optoelectronic applications due to its electrical conductivity, optical transparency, and chemical stability. This study employs spectroscopic ellipsometry (SE) to analyze ITO layers, enabling nondestructive determination of film thickness, dielectric functions, and bulk conductivity. Electrical properties derived from SE are compared with those obtained using the four‐point probe method (4PM) to improve metrological tools for nanotechnology applications and optimize deposition process monitoring for better control of film properties. This work also investigates the chemical stability of ITO layers under etching conditions and explores the development of new sheet resistance standards for scanning microwave microscopy (SMM). The results show that ITO resistivity, calculated from fitted SE data, increases with oxygen flow rate up to 5 cm3(STP) min−1. Good agreement is observed between sheet resistance values obtained by SE and 4PM up to 3 cm3(STP) min−1. Additionally, the sheet resistance values of a distinct set of microstructured ITO samples with different ITO layer thicknesses are determined by SMM, which are highly consistent with those obtained by the 4PM.</abstract>
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