<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>6013</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>24</pageFirst>
    <pageLast>34</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4347</issue>
    <volume/>
    <type>bookpartcollection</type>
    <publisherName>International Society for Optical Engineering (SPIE)</publisherName>
    <publisherPlace>Bellingham, Wash.</publisherPlace>
    <creatingCorporation>Lawrence Livermore National Laboratory</creatingCorporation>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Femtosecond laser damage in dielectric coatings</title>
    <abstract language="eng">Multi-shot investigations of Ti:sapphire laser (wavelength (lambda) approximately equals 800 nm) induced damage were performed in three different laboratories (BAM, Berlin; LZH, Hannover; UNM, Albuquerque). The ablation behavior of a high reflecting mirror consisting of alternating (lambda) /4- layers of Ta2O5 and SiO2 was studied. Fused silica served as substrate. The influence of the pulse duration ((tau) equals 13 - 130 fs), the pulse number (30 - (infinity) ) and the repetition rate (10 Hz - 100 MHz) on the damage threshold will be discussed.</abstract>
    <parentTitle language="eng">Laser-induced damage in optical materials - 2000</parentTitle>
    <identifier type="old">6385</identifier>
    <identifier type="isbn">0-8194-4036-1</identifier>
    <identifier type="doi">10.1117/12.425056</identifier>
    <identifier type="issn">1605-7422</identifier>
    <note>Serientitel: SPIE proceedings series – Series title: SPIE proceedings series</note>
    <enrichment key="bibliotheksstandort">Sonderstandort: Publica-Schrank</enrichment>
    <enrichment key="eventName">32nd Annual Boulder Damage Symposium</enrichment>
    <enrichment key="eventPlace">Boulder, CO, USA</enrichment>
    <enrichment key="eventStart">2000-10-16</enrichment>
    <enrichment key="eventEnd">2000-10-18</enrichment>
    <author>Jörn Bonse</author>
    <author>Steffen Baudach</author>
    <author>Jörg Krüger</author>
    <author>Wolfgang Kautek</author>
    <collection role="literaturgattung" number="">Verlagsliteratur</collection>
    <collection role="fulltextaccess" number="">Physisches Exemplar in der Bibliothek der BAM vorhanden ("Hardcopy Access")</collection>
  </doc>
  <doc>
    <id>6328</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>19</pageFirst>
    <pageLast>25</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>74</volume>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace>Berlin</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Femtosecond laser ablation of silicon-modification thresholds and morphology</title>
    <abstract language="eng">We investigated the initial modification and ablation of crystalline silicon with single and multiple Ti:sapphire laser pulses of 5 to 400 fs duration. In accordance with earlier established models, we found the phenomena amorphization, melting, re-crystallization, nucleated vaporization, and ablation to occur with increasing laser fluence down to the shortest pulse durations. We noticed new morphological features (bubbles) as well as familiar ones (ripples, columns). A nearly constant ablation threshold fluence on the order of 0.2 J/cm2 for all pulse durations and multiple-pulse irradiation was observed. For a duration of ,100 fs, significant incubation can be observed, whereas for 5 fs pulses, the ablation threshold does not depend on the pulse number within the experimental error. For micromachining of silicon, a pulse duration of less than 500 fs is not advantageous.</abstract>
    <parentTitle language="eng">Applied physics A</parentTitle>
    <identifier type="old">6721</identifier>
    <identifier type="doi">10.1007/s003390100893</identifier>
    <identifier type="issn">0947-8396</identifier>
    <enrichment key="bibliotheksstandort">Sonderstandort: Publica-Schrank</enrichment>
    <enrichment key="date_peer_review">27.01.2005</enrichment>
    <author>Jörn Bonse</author>
    <author>Steffen Baudach</author>
    <author>Jörg Krüger</author>
    <author>Wolfgang Kautek</author>
    <author>Matthias Lenzner</author>
    <collection role="literaturgattung" number="">Verlagsliteratur</collection>
    <collection role="fulltextaccess" number="">Physisches Exemplar in der Bibliothek der BAM vorhanden ("Hardcopy Access")</collection>
  </doc>
  <doc>
    <id>6314</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>839</pageFirst>
    <pageLast>844</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>197-198</volume>
    <type>article</type>
    <publisherName>North-Holland</publisherName>
    <publisherPlace>Amsterdam</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Laser ablation thresholds of silicon for different pulse durations: theory and experiment</title>
    <abstract language="eng">The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations =20 and 500 fs. Experiments have been performed using 100 Ti:Sap-phire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400 fs, respectively. Good agreement is obtained between theory and experiment.</abstract>
    <parentTitle language="eng">Applied surface science</parentTitle>
    <identifier type="old">6707</identifier>
    <identifier type="doi">10.1016/S0169-4332(02)00458-0</identifier>
    <identifier type="issn">0169-4332</identifier>
    <identifier type="issn">1873-5584</identifier>
    <enrichment key="bibliotheksstandort">Sonderstandort: Publica-Schrank</enrichment>
    <enrichment key="bibliotheksstandort">ZA 83</enrichment>
    <enrichment key="date_peer_review">27.01.2005</enrichment>
    <author>H.O. Jeschke</author>
    <author>M.E. Garcia</author>
    <author>Matthias Lenzner</author>
    <author>Jörn Bonse</author>
    <author>Jörg Krüger</author>
    <author>Wolfgang Kautek</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Laser ablation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Pulse duration</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Threshold of silicon</value>
    </subject>
    <collection role="literaturgattung" number="">Verlagsliteratur</collection>
    <collection role="fulltextaccess" number="">Physisches Exemplar in der Bibliothek der BAM vorhanden ("Hardcopy Access")</collection>
  </doc>
  <doc>
    <id>2645</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>272</pageFirst>
    <pageLast>282</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>202</volume>
    <type>article</type>
    <publisherName>North-Holland</publisherName>
    <publisherPlace>Amsterdam</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Femtosecond laser irradiation of indium phosphide in air: Raman spectroscopic and atomic force microscopic investigations</title>
    <parentTitle language="eng">Applied surface science</parentTitle>
    <identifier type="old">2620</identifier>
    <identifier type="issn">0169-4332</identifier>
    <identifier type="issn">1873-5584</identifier>
    <enrichment key="date_peer_review">11.09.2003</enrichment>
    <author>Jörn Bonse</author>
    <author>J. M. Wrobel</author>
    <author>Klaus-Werner Brzezinka</author>
    <author>N. Esser</author>
    <author>Wolfgang Kautek</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Femtosecond laser ablation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Indium phosphide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic force microscopy</value>
    </subject>
    <collection role="literaturgattung" number="">Verlagsliteratur</collection>
    <collection role="fulltextaccess" number="">Datei im Netzwerk der BAM verfügbar ("Closed Access")</collection>
  </doc>
  <doc>
    <id>1068</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>89</pageFirst>
    <pageLast>94</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>72</volume>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace>Berlin</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultrashort-pulse laser ablation of indium phosphide in air</title>
    <abstract language="eng">Ablation of indium phosphide wafers in air was performed with low repetition rate ultrashort laser pulses (130 fs, 10 Hz) of 800 nm wavelength. The relationships between the dimensions of the craters and the ablation parameters were analyzed. The ablation threshold fluence depends on the number of pulses applied to the same spot. The single-pulse ablation threshold value was estimated to be fth(1)=0.16 J/cm2. The dependence of the threshold fluence on the number of laser pulses indicates an incubation effect. Morphological and chemical changes of the ablated regions were characterized by means of scanning electron microscopy and Auger electron spectroscopy.</abstract>
    <parentTitle language="eng">Applied physics A</parentTitle>
    <identifier type="old">583</identifier>
    <identifier type="doi">10.1007/s003390000596</identifier>
    <identifier type="issn">0947-8396</identifier>
    <enrichment key="date_peer_review">11.01.2001</enrichment>
    <author>Jörn Bonse</author>
    <author>Jerzy Wrobel</author>
    <author>Jörg Krüger</author>
    <author>Wolfgang Kautek</author>
    <collection role="literaturgattung" number="">Verlagsliteratur</collection>
    <collection role="fulltextaccess" number="">Weder Datei noch physisches Exemplar vorhanden ("No Access")</collection>
  </doc>
  <doc>
    <id>1382</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>297</pageFirst>
    <pageLast>301</pageLast>
    <pageNumber/>
    <edition/>
    <issue>408</issue>
    <volume/>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace>Amsterdam</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Femtosecond laser damage of a high reflecting mirror</title>
    <abstract language="eng">Multiple pulse investigations of 130-fs Ti:sapphire laser-induced damage of a high reflecting mirror consisting of alternating ?/4-layers of Ta2O5 and SiO2 and a single 500-nm Ta2O5 film were performed. In both cases, fused silica served as the substrate. For a fixed number of 1000 laser pulses per spot, a decrease in the damage threshold fluence of the mirror by a factor of two was observed by changing the repetition rate from 10 Hz to 1 kHz. A single 500-nm Ta2O5 film shows higher damage resistance compared to the mirror. The mirror and the Ta2O5 film samples were partially coated with a 300-nm-thick aluminium layer. The aluminium coating does not influence the damage threshold of the dielectrics underneath.</abstract>
    <parentTitle language="eng">Thin solid films</parentTitle>
    <identifier type="old">1177</identifier>
    <identifier type="doi">10.1016/S0040-6090(02)00074-3</identifier>
    <identifier type="issn">0040-6090</identifier>
    <enrichment key="bibliotheksstandort">Sonderstandort: Publica-Schrank</enrichment>
    <enrichment key="date_peer_review">06.03.2003</enrichment>
    <author>Jörn Bonse</author>
    <author>Steffen Baudach</author>
    <author>Wolfgang Kautek</author>
    <author>Jörg Krüger</author>
    <author>E. Welsch</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Aluminium</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Laser ablation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Optical coatings</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon oxide</value>
    </subject>
    <collection role="literaturgattung" number="">Verlagsliteratur</collection>
    <collection role="fulltextaccess" number="">Physisches Exemplar in der Bibliothek der BAM vorhanden ("Hardcopy Access")</collection>
  </doc>
  <doc>
    <id>780</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S395</pageFirst>
    <pageLast>S398</pageLast>
    <pageNumber/>
    <edition/>
    <issue>7</issue>
    <volume>69</volume>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace>Berlin</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ablation experiments on polyimide with femtosecond laser pulses</title>
    <abstract language="eng">Some applications of polymer films require the microstructuring of partly uneven substrates. This cannot be achieved by conventional photolithography, usually performed with ultraviolet short-pulse lasers (excimer, fourth harmonic Nd:YAG). When processing thermally sensitive or undoped polymers with low optical absorption, the use of femtosecond laser pulses can improve the ablation precision, also reducing the heat-affected zone. Therefore, a Ti:sapphire laser system was employed to perform ablation experiments on polyimide (PI). The irradiated areas were evaluated by means of optical and scanning electron microscopy. Highly oriented ripple structures, which are related to the polarization state of the laser pulses, were observed in the cavities. The relationship between the ablation threshold fluence and the number of laser pulses applied to the same spot is described in accordance with an incubation model.</abstract>
    <parentTitle language="eng">Applied physics A</parentTitle>
    <identifier type="old">243</identifier>
    <identifier type="doi">10.1007/s003390051424</identifier>
    <identifier type="issn">0947-8396</identifier>
    <enrichment key="eventName">5th International Conference on Laser Ablation ; COLA '99</enrichment>
    <enrichment key="eventPlace">Göttingen, Germany</enrichment>
    <enrichment key="eventStart">1999-07-19</enrichment>
    <enrichment key="eventEnd">1999-07-23</enrichment>
    <enrichment key="date_peer_review">25.07.2000</enrichment>
    <author>Steffen Baudach</author>
    <author>Jörn Bonse</author>
    <author>Wolfgang Kautek</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Polyimide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Laser</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ablation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Femtosecond laser</value>
    </subject>
    <collection role="literaturgattung" number="">Verlagsliteratur</collection>
    <collection role="fulltextaccess" number="">Weder Datei noch physisches Exemplar vorhanden ("No Access")</collection>
  </doc>
  <doc>
    <id>967</id>
    <completedYear/>
    <publishedYear>2000</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>161</pageFirst>
    <pageLast>172</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4065</issue>
    <volume/>
    <type>bookpartcollection</type>
    <publisherName>SPIE</publisherName>
    <publisherPlace>Bellingham, Wash.</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Femtosecond laser micromachining of technical materials</title>
    <abstract language="eng">Micromachining experiments were performed with Ti:sapphire laser pulses (130 fs - 150 fs, 800 nm, approximately 10 Hz) in air. Employing the direct focusing technique, highly absorbing titanium nitride (TiN) and weakly absorbing polyimide (PI) and polymethylmethacrylate (PMMA) served as target materials. The lateral and vertical precision of the laser ablation and morphological features were characterized by scanning force (SFM), scanning electron (SEM) and optical microscopy. For TiN, incubation can be observed, i.e. the single-pulse surface damage threshold (0.26 J/cm2) is by a factor of two greater than the threshold for 100 pulses. Ablation rates below 10 nm per pulse can be achieved. The evolution of sub-wavelength ripples is presented in dependence on pulse number and laser fluence, respectively. The incubation behavior of the polymers can be described by an accumulation model as for TiN. Experiments on PI with varying focal lengths result in the same modification thresholds. Different polarization states of light (linear, circular) lead to a variation of the ablation rate and to various morphological patterns in the ablation craters (wavelength ripples, cones). Swelling of PMMA occurred at fluences below the ablation threshold.</abstract>
    <parentTitle language="eng">High-power laser ablation III</parentTitle>
    <identifier type="old">467</identifier>
    <identifier type="isbn">0-8194-3700-X</identifier>
    <identifier type="doi">10.1117/12.407346</identifier>
    <identifier type="issn">1605-7422</identifier>
    <note>Serientitel: SPIE proceedings series – Series title: SPIE proceedings series</note>
    <enrichment key="eventName">3rd SPIE's International Conference on High-Power Laser Ablation</enrichment>
    <enrichment key="eventPlace">Santa Fe, NM, USA</enrichment>
    <enrichment key="eventStart">24.04.2000</enrichment>
    <enrichment key="eventEnd">28.04.2000</enrichment>
    <author>Jörn Bonse</author>
    <author>Steffen Baudach</author>
    <author>Jörg Krüger</author>
    <author>Wolfgang Kautek</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ablation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Femtosecond pulse laser</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Laser processing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Micromachining</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Polymer</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Titanium nitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ripples</value>
    </subject>
    <collection role="literaturgattung" number="">Verlagsliteratur</collection>
    <collection role="fulltextaccess" number="">Weder Datei noch physisches Exemplar vorhanden ("No Access")</collection>
  </doc>
  <doc>
    <id>937</id>
    <completedYear/>
    <publishedYear>2000</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>280</pageFirst>
    <pageLast>287</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3933</issue>
    <volume/>
    <type>bookpartcollection</type>
    <publisherName>SPIE</publisherName>
    <publisherPlace>Bellingham, Wash.</publisherPlace>
    <creatingCorporation>United States / Air Force</creatingCorporation>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Femtosecond pulse laser machining of InP wafers</title>
    <abstract language="eng">Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area.</abstract>
    <parentTitle language="eng">Laser applications in microelectronic and optoelectronic manufacturing V</parentTitle>
    <identifier type="old">429</identifier>
    <identifier type="isbn">0-8194-3550-3</identifier>
    <identifier type="issn">1605-7422</identifier>
    <note>Serientitel: SPIE proceedings series – Series title: SPIE proceedings series</note>
    <enrichment key="eventName">5th Laser Applications in Microelectronics and Optoelectronics Manufacturing Conference (LAMOM)</enrichment>
    <enrichment key="eventPlace">San José, CA, USA</enrichment>
    <enrichment key="eventStart">240.01.2000</enrichment>
    <enrichment key="eventEnd">26.01.2000</enrichment>
    <author>Jörn Bonse</author>
    <author>Jörg Krüger</author>
    <author>Wolfgang Kautek</author>
    <author>J. M. Wrobel</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Femtosecond laser ablation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Indium phosphide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Auger electron spectroscopy</value>
    </subject>
    <collection role="literaturgattung" number="">Verlagsliteratur</collection>
    <collection role="fulltextaccess" number="">Weder Datei noch physisches Exemplar vorhanden ("No Access")</collection>
  </doc>
  <doc>
    <id>958</id>
    <completedYear/>
    <publishedYear>2000</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpartcollection</type>
    <publisherName>IEEE Service Center</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation>European Physical Society</creatingCorporation>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Femtosecond-Pulse Laser Machining of Semiconducting Materials</title>
    <abstract language="eng">Summary form only given. Machining investigations of crystalline silicon have been performed with laser pulses at a wavelength of 780 nm in the range between 5 fs and 400 fs. Applying 100 pulses per spot, surface damage thresholds were determined by the measurement of the damage diameter. In this pulse duration regime, the threshold fluences were nearly constant. Single-pulse investigations with 5 fs pulses yielded a value of about 0.15 J cm-2 identical to the multi-pulse experiment. This is in contradiction to the behaviour of dielectrics where incubation effects alter the optical properties down to the 5 fs pulse regime. Employing laser pulses with a duration of 130 fs at a wavelength of 800 nm, single-pulse ablation thresholds of 0.23 J cm-2 and 0.16 J cm-2 were determined for Si and InP in air, respectively. The threshold fluence was calculated from the linear relation between the square of the diameters versus the logarithm of the laser fluences.</abstract>
    <parentTitle language="eng">Conference digest</parentTitle>
    <identifier type="old">455</identifier>
    <identifier type="isbn">0-7803-6319-1</identifier>
    <identifier type="doi">10.1109/CLEOE.2000.910410</identifier>
    <enrichment key="eventName">CLEO/Europe 2000 ; Conference on Lasers and Electro-Optics Europe ; Conférence Européenne sur les Lasers et l'Electro-Optique ; CLEO/Europe-IQEC</enrichment>
    <enrichment key="eventPlace">Nice, France</enrichment>
    <enrichment key="eventStart">2000-09-10</enrichment>
    <enrichment key="eventEnd">2000-09-15</enrichment>
    <author>Jörg Krüger</author>
    <author>Jörn Bonse</author>
    <author>Steffen Baudach</author>
    <author>Wolfgang Kautek</author>
    <author>M. Lenzner</author>
    <author>J. M. Wrobel</author>
    <collection role="literaturgattung" number="">Verlagsliteratur</collection>
    <collection role="fulltextaccess" number="">Weder Datei noch physisches Exemplar vorhanden ("No Access")</collection>
  </doc>
  <doc>
    <id>802</id>
    <completedYear/>
    <publishedYear>2000</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>659</pageFirst>
    <pageLast>663</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>154-155</volume>
    <type>article</type>
    <publisherName>North-Holland</publisherName>
    <publisherPlace>Amsterdam</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Femtosecond pulse laser processing of TiN on silicon</title>
    <abstract language="eng">Ultrashort pulse laser microstructuring (pulse duration 130 fs, wavelength 800 nm, repetition rate 2 Hz) of titanium nitride (TiN) films on silicon substrates was performed in air using the direct focusing technique. The lateral and vertical precision of laser ablation was evaluated. The TiN ablation threshold changed with the number of pulses applied to the surface due to an incubation effect. An ablation depth per pulse below the penetration depth of light was observed. Columnar structures were formed in the silicon substrate after drilling through the TiN layer.</abstract>
    <parentTitle language="eng">Applied surface science</parentTitle>
    <identifier type="old">269</identifier>
    <identifier type="doi">10.1016/S0169-4332(99)00481-X</identifier>
    <identifier type="issn">0169-4332</identifier>
    <identifier type="issn">1873-5584</identifier>
    <enrichment key="date_peer_review">27.07.2000</enrichment>
    <author>Jörn Bonse</author>
    <author>Pascale Rudolph</author>
    <author>Jörg Krüger</author>
    <author>Steffen Baudach</author>
    <author>Wolfgang Kautek</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Femtosecond laser ablation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Titanium nitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Optical properties</value>
    </subject>
    <collection role="literaturgattung" number="">Verlagsliteratur</collection>
    <collection role="fulltextaccess" number="">Datei im Netzwerk der BAM verfügbar ("Closed Access")</collection>
  </doc>
</export-example>
