Dokument-ID Dokumenttyp Autoren/innen Persönliche Herausgeber/innen Haupttitel Abstract Auflage Verlagsort Verlag Herausgeber (Institution) Erscheinungsjahr Titel des übergeordneten Werkes Jahrgang/Band ISBN Veranstaltung Veranstaltungsort Beginndatum der Veranstaltung Enddatum der Veranstaltung Ausgabe/Heft Erste Seite Letzte Seite URN DOI Lizenz Datum der Freischaltung OPUS4-41101 misc Schlichting, S.; Hönig, Gerald M. O.; Müßener, J.; Hille, P.; Grieb, T.; Teubert, J.; Schörmann, J.; Wagner, M. R.; Rosenauer, A.; Eickhoff, M.; Hoffmann, A.; Callsen, G. Tuning of the Quantum-Confined Stark Effect in Wurtzite [000-1] Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design Recently, we suggested an unconventional approach [the so-called Internal-Field-Guarded-Active-Region Design (IFGARD)] for the elimination of the crystal polarization field induced quantum confined Stark effect (QCSE) in polar semiconductor heterostructures. And in this work, we demonstrate by means of micro-photoluminescence techniques the successful tuning as well as the elimination of the QCSE in strongly polar [000-1] wurtzite GaN/AlN nanodiscs while reducing the exciton life times by more than two orders of magnitude. The IFGARD based elimination of the QCSE is independent of any specific crystal growth procedures. Furthermore, the cone-shaped geometry of the utilized nanowires (which embeds the investigated IFGARD nanodiscs) facilitates the experimental differentiation between quantum confinement- and QCSE-induced emission energy shifts. Due to the IFGARD, both effects become independently adaptable. Ithaca, NY Cornell University 2017 arXiv.org arXiv:1707.06882 1 9 urn:nbn:de:kobv:b43-411013 http://www.gesetze-im-internet.de/urhg/index.html 2017-07-25 OPUS4-41194 Vortrag Wagner, M. R.; Schlichting, S.; Müßener, J.; Hille, P.; Teubert, J.; Schörmann, J.; Rosenauer, A.; Eickhoff, M.; Hoffmann, A.; Callsen, G.; Hönig, Gerald M. O. Suppression of the quantum confined Stark effect in polar III-nitride heterostructures One of the most significant limitations for the quantum efficiency of group III-nitride based light emitters is the spatial electron-hole separation due to the quantum-confined Stark effect (QCSE). To overcome this problem, Hönig et al. [1] proposed a novel concept, the Internal-Field-Guarded-Active-Region Design (IFGARD), which suppresses the QCSE for wurtzite crystals in the [0001] direction. Here, we show how encapsulating the active region by additional guard layers results in a strong reduction of the built-in electric field in c-plane wurtzite nanostructures. Even more importantly, we demonstrate the first experimental evidence for the successful realization of an IFGARD structure based on GaN/AlN heterostructures embedded in GaN nanowires. By means of power-dependent and time-resolved µ-photoluminescence (µ-PL) we experimentally proof the validity of the unconventional IFGARD structure. We managed to tune the emission of 4-nm-thick GaN nano-discs up to 3.32 eV at low excitation powers, which is just 150 meV below the bulk GaN bandgap. Our results demonstrate an almost complete elimination of the QCSE in comparison to conventional structures which show approximately 1 eV red-shifted emission. The suppression of the QCSE results in a significant increase of the radiative exciton decay rates by orders of magnitude and demonstrates the potential of IFGARD structures for future light sources based on polar heterostructures. [1] Hönig et al., Phys. Rev. Applied 7, 024004 (2017) 2017 International Conference on Nitride Semiconductors 12 of the European Materials Research Society Strasbourg, France 24.07.2017 28.07.2017 2017-08-03 OPUS4-45788 Zeitschriftenartikel Schlichting, S.; Hönig, Gerald; Müßener, J.; Hille, P.; Grieb, T.; Westerkamp, S.; Teubert, J.; Schörmann, J.; Wagner, M.R.; Rosenauer, A.; Eickhoff, M.; Hoffmann, A.; Callsen, G. Suppression of the quantum-confined Stark effect in polar nitride heterostructures Recently, we suggested an unconventional approach (the so-called Internal-Field-Guarded-Active-Region Design "IFGARD") for the elimination of the quantum-confined Stark effect in polar semiconductor heterostructures. The IFGARD-based suppression of the Stark redshift on the order of electronvolt and spatial charge carrier separation is independent of the specific polar semiconductor material or the related growth procedures. In this work, we demonstrate by means of micro-photoluminescence techniques the successful tuning as well as the elimination of the quantum-confined Stark effect in strongly polar [000-1] wurtzite GaN/AlN nanodiscs as evidenced by a reduction of the exciton lifetimes by up to four orders of magnitude. Furthermore, the tapered geometry of the utilized nanowires (which embed the investigated IFGARD nanodiscs) facilitates the experimental differentiation between quantum confinement and Stark emission energy shifts. Due to the IFGARD, both effects become independently adaptable. Springer Nature 2018 Communications Physics 1 48, 1 8 urn:nbn:de:kobv:b43-457884 10.1038/s42005-018-0044-1 https://creativecommons.org/licenses/by/4.0/deed.de 2018-08-28