TY  - CONF
A1  - Steglich, Patrick
T1  - Towards monolithic integration of polymer-based electro-optical devices in silicon photonic integrated circuits using a 250 nm SOI technology
N2  - Silicon-based photonic integrated circuits (PICs) in complementary metal oxide semiconductor (CMOS) technology are essential for next-generation communication systems and neuromorphic computing. However, silicon does not have efficient electro-optical (EO) effects. Since silicon limits the performance of current photonic devices, more advanced materials such as nonlinear optical polymers are needed to exploit the full potential of PICs. As a preliminary proof of concept, we demonstrate the quadratic EO effect and the electric field-induced EO effect using a Mach-Zehnder interferometer in conjunction with a co-integrated Ge photodiode. Our concept of monolithic integration could pave the way for next-generation PICs.
T2  - SPIE Optics + Optoelectronics 2025
CY  - Prague, Czech Republic
DA  - 05.06.2025
KW  - CMOS
KW  - Silicon-based photonic integrated circuits
KW  - Mach-Zehnder interferometer
KW  - Ge-photodiode
PY  - 2025
UR  - https://www.spiedigitallibrary.org/conference-proceedings-of-spie/13530/135300R/Towards-monolithic-integration-of-polymer-based-electro-optical-devices-in/10.1117/12.3056280.short
DO  - https://doi.org/10.1117/12.3056280
AN  - OPUS4-63569
LA  - eng
AD  - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany
ER  -