TY - GEN A1 - Resch-Genger, Ute T1 - Spectroscopic characterization of semiconductor and lanthanide-based nanocrystals with vis and NIR emission N2 - Common approaches to improve the optical properties of semiconductor quantum dots and lanthanide doped nanophosphors present core/shell structures as radiationless deactivation at the particle surface is usually the main energy loss mechanism. This has led to increasingly sophisticated particle architectures using multishell systems with shells of different chemical composition and thickness and initiated an increasing number of quantitative spectroscopic studies focusing on the key performance parameter photoluminescence quantum yield to identify optimum particle structures. This is particularly challenging in the long wavelength region > 1000 nm and for nonlinear emitters like upconversion nanocrystals. Here, we present suitable absolute methods to quantify the photoluminescence of these different emitters in the vis/NIR/IR and as function of excitation power density and underline the impact of such measurements on a profound mechanistic understanding of the nonradiative deactivation pathways in semiconductor and upconversion nanocrystals of different size and particle architecture in different environments. T2 - NANO 2018 CY - Hong Kong, People's Republic of China DA - 24.06.2018 KW - Upconversion KW - Semiconductor KW - Quantum dot KW - Nanoparticle KW - Absolute fluorometry KW - Integrating sphere spectroscopy KW - NIR KW - IR KW - Fluorescence KW - Surface chemistry KW - Deactivation pathways KW - Modeling KW - Size PY - 2018 UR - https://opus4.kobv.de/opus4-bam/frontdoor/index/index/docId/45797 AN - OPUS4-45797 AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany