TY - JOUR A1 - Acosta-Zepeda, C. A1 - Saavedra, S. A1 - Bonse, Jörn A1 - Haro-Poniatowski, E. T1 - Modelling of single UV nanosecond pulsed laser surface modifications of silicon T2 - Laser Physics N2 - Irradiation with a single spatially Gaussian-shaped nanosecond laser pulse in the melting regime can result in a characteristic annular change in the surface morphology of crystalline silicon. This has been verified experimentally in a variety of situations, where dimple-shaped surface topographies are produced. In a recent work we have investigated the induced changes in the surface topography upon exposure to wavelengths in the visible and near infrared spectral region. Irradiation in the UV requires a more detailed analysis due to the enhanced absorption of the material. In the present analysis, we determine under which conditions our previous model can be used and the corresponding results are presented. PB - IOP Publishing / Astro Ltd CY - Bristol, United Kingdom KW - Laser KW - Silicon KW - Surface modification PY - 2020 UR - https://opus4.kobv.de/opus4-bam/frontdoor/index/index/docId/51022 AN - OPUS4-51022 SN - 1555-6611 SN - 1054-660X VL - 30 IS - 8 SP - 086003-1 EP - 086003-4 AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany