TY - CONF A1 - Ermilova, Elena A1 - Weise, Matthias A1 - de Preville, Sophie A1 - Hoffmann, Johannes A1 - Morán-Meza, José A1 - Hertwig, Andreas A1 - Piquemal, François T1 - Ellipsometry as optical metrology method for analysis of reference materials for nanoelectronics N2 - Electrical properties of materials at the nanoscale can be characterized using scanning microwave microscopes (SMM) and conductive atomic force microscopes (C AFM). However, the measurement results are difficult to compare since different setups and different reference standards are used. The development of new “out-of-lab” reference standards can contribute to the traceability and reliability of these scanning probe microscopy methods (SPM) and facilitate their broader industrial application. In this study, we discuss the capability of optical methods such as ellipsometry for the characterization of existing and the development of new reference calibration samples for scanning microwave microscopy. Ellipsometry is a fast and non-destructive method, which enables very accurate determination of the layer thickness and the dielectric functions of the materials. Imaging ellipsometry is suitable for spatially resolved measurements when analyzing thin layers in microstructured samples. We show how the electrical resistivity of indium tin oxide (ITO) layers in newly designed resistive calibration samples can be obtained from spectroscopic ellipsometric measurements. The extension of the measurement range into the mid-infrared region was necessary when analyzing ITO layers with low conductivity. This parameter was obtained by fitting a Drude function describing the absorption of the free carriers. The impact of the coating process conditions on the layer properties is discussed. Imaging ellipsometry was applied for the characterisation of thin ITO and SiO2 layers in microstructured resistive and capacitance calibration kits. The uncertainties of determined layer thicknesses were specified according to standardized practice guides used in ellipsometry. We show how statistical fingerprint analysis of the measured ellipsometric transfer quantities can be used to validate the quality of potential reference materials for nano-electronics and to monitor the processing of structured samples. T2 - L. ALTECH 2024 - Analytical techniques for accurate nanoscale characterization of advanced materials CY - Strasbourg, France DA - 27.05.2024 KW - Ellipsometry KW - Reference materials KW - Transparent conductive Oxides KW - Scannig probe microscope KW - Metrology KW - Nanoelectronics PY - 2024 AN - OPUS4-60268 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -