TY - JOUR A1 - Hodoroaba, Vasile-Dan A1 - Kim, K. J. T1 - Measurement of Elemental Composition of FeNi and SiGe Thin Films by Electron Probe Microanalysis with Stratagem Software JF - Microscopy and Microanalysis N2 - The present study repeats electron probe microanalysis (EPMA) measurements with the thin film analysis software Stratagem on an Fe-Ni thin films on silicon and reports - for the first-time – results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide substrate. If the very good EPMA/Stratagem results for the FeNi system were expected due to previous studies [2], the data obtained for the SiGe films are particularly valuable, because of the challenging insulator substrate of Al2O3. The conductivity of the Si1-xGex surface necessary for charging-free analysis was ensured by applying conductive copper tape onto film surface down to sample stage. Four accelerating voltages, 15, 20, 25 and 30 kV, have been applied, so that the Ge Kα X-ray line at 9.87 keV could be excited. KW - thin film analysis KW - X-ray spectroscopy KW - Fe-Ni KW - Si-Ge KW - Stratagem KW - Electron probe microanalysis (EPMA) PY - 2018 UR - https://www.cambridge.org/core/journals/microscopy-and-microanalysis/article/measurement-of-elemental-composition-of-feni-and-sige-thin-films-by-electron-probe-microanalysis-with-stratagem-software/D4CF5D45B11FCF0DEC8155A89EDACF25 DO - https://doi.org/10.1017/S1431927618004282 VL - 24 IS - S1 (August) SP - 758 EP - 759 PB - Cambridge University Press CY - New York, NY, U.S.A. AN - OPUS4-45950 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -