TY - CONF A1 - Ermilova, Elena T1 - Hybrid measurement technique for defect characterisation in wide bandgap semiconductors N2 - Climate change and increasing demand for electricity require the use of power electronics based on new wide bandgap (WBG) compound semiconductors. Power electronics devices are used in numerous application areas to control and convert electric energy. These may include generation and distribution of renewable energy for green hydrogen, electrification of transport or 5G communication. WBG electronics have much higher efficiency than the silicon-based ones and can operate at higher power densities, voltages, temperatures and switching frequencies with low energy losses. However, defects in the semiconductors can considerably affect the performance of power electronic devices or make their operation even impossible. The presentation will show the application of spectroscopic and imaging ellipsometry as well as white light interference microscopy for defect characterisation in SiC, GaN and Ga2O3 over a wide wavelength range. We used parameterized modelling of ellipsometric transfer parameters to determine the dielectric properties of bulk materials and thin layers. Imaging ellipsometry offers more information and is an advanced variant of optical microscopy, combining the lateral resolution of optical microscopy with the extreme sensitivity to surface and interface effects of ellipsometry. Surface topography and morphology of different types of defects were additionally investigated with imaging white light interference microscopy. Modern electronic thin film components require complex surface analysis methodologies and hybrid metrology. Hybrid measurement techniques enable fast and non-destructive traceable characterisation of thin film compound semiconductors as well as accurate detection and identification of defects. This methodical approach leads to a better understanding of the materials themselves and of the defect formation mechanisms during manufacturing. This work aims to enable highly reproducible manufacturing of compound semiconductor power electronics as well as operation monitoring to ensure failure-safety of electronic systems in power electronic devices. T2 - Abteilungskolloquium 2023, BAM CY - Berlin, Germany DA - 09.02.2023 KW - Spectroscopic and imaging ellipsometry KW - White light interference microscopy KW - Wide bandgap semiconductors KW - Surface analysis, PY - 2023 AN - OPUS4-59443 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -