TY - CONF A1 - Ermilova, Elena A1 - Weise, Matthias A1 - Hertwig, Andreas T1 - Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers T2 - EOS Annual Meeting (EOSAM 2022) N2 - Recent developments in power electronics require the use of new wide bandgap compound semiconductor. We demonstrate the use of the ellipsometry and white light interference microscopy to detect defects in epitaxially grown SiC layers on SiC substrates. Such hybrid optical metrology methods can be used to better understand the mechanism of the development of the defects as well as their effects on the materialĀ“s optoelectronic properties. T2 - EOS Annual Meeting (EOSAM 2022) CY - Porto, Portugal DA - 12.09.2022 KW - Imaging ellipsometry KW - White light interference microscopy KW - Wide bandgap compound semiconductor KW - Epitaxially grown 4H-SiC layers PY - 2022 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-561113 DO - https://doi.org/10.1051/epjconf/202226610001 VL - 266 SP - 1 EP - 2 AN - OPUS4-56111 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -