TY - JOUR A1 - Wollschläger, Nicole A1 - Österle, Werner A1 - Häusler, Ines A1 - Stewart, M. T1 - Ga+ implantation in a PZT film during focused ion beam micro-machining T2 - Physica status solidi C N2 - The objective of the present work was to study the impact of Focused Ion Beam (FIB) machining parameters on the thickness of the damaged layer within a thin film PZT. Therefore, different Ga+- ion doses and ion energies were applied to a standard PZT film (80/20 lead zirconium titanate) under two beam incidence angles (90° and 1°). The thicknesses of the corresponding Ga+-implanted layers were then determined by cross-sectional TEM in combination with energy dispersive spectroscopic (EDS) line-scans and correlated with polarisation hysteresis loops. The results show a decrease of Ga+-implanted layer thickness with decreasing inclination angle, whereas ion energy and ion dose could be correlated with gallium concentration in the implanted layers.. Under the most unfavorable conditions the depth of the affected zone was 26 nm, it was only 2 nm for the most favorable conditions. PB - Wiley-VCH CY - Berlin KW - PZT KW - Focused ion beam KW - Gallium implantation KW - Polarisation-electric field loop PY - 2015 UR - https://opus4.kobv.de/opus4-bam/frontdoor/index/index/docId/32872 AN - OPUS4-32872 SN - 1610-1634 SN - 1862-6351 SN - 1610-1642 VL - 12 IS - 3 SP - 314 EP - 317 AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany