TY - JOUR A1 - Häusler, Ines A1 - Moeck, P. A1 - Volz, K. A1 - Neumann, W. T1 - Atomically ordered (Mn,Ga) As crystallites on and within GaAs T2 - Crystal research and technology N2 - Metal organic vapor phase epitaxy (MOVPE) of Mn-rich (Mn,Ga)As on (001) oriented GaAs wafers resulted in atomically ordered (Mn,Ga)As crystallites of two morphological kinds, partially embedded on the wafer surface and fully embedded within the single crystalline matrix. While the former were apparently free of defects (other than unavoidable point defects), the latter contained two domains separated by a grain boundary. Since atomic ordering can be modeled by space group symmetry descent considerations (Bärnighausen trees) that start with the space group of the known crystallographic phases of random (Mn,Ga)As alloys with specified chemical compositions, reasonable structure hypotheses have been derived for two atomically ordered Mn0.75Ga0.25As phases that we call the trigonal α' and the monoclinic β' phases. The implications of these structure hypotheses are in agreement with the results of a range of scanning transmission electron microscopy (STEM) and parallel illumination electron diffraction (ED) studies that include quantitative energy dispersive X-ray spectroscopy, X-ray spectroscopic imaging, as well nanobeam diffraction and high angle precession ED. The coexistence of two domains within the fully embedded crystallites is predicted by the corresponding Bärnighausen tree and observed experimentally for the fully embedded crystallites. PB - Wiley-VCH Verlag GmbH & Co. KGaA CY - Weinheim KW - (Mn,Ga) As crystallites KW - Bärninghausen symmetry trees KW - Precession electron diffraction KW - Scanning nanobeam mapping KW - STEM/TEM imaging PY - 2015 UR - https://opus4.kobv.de/opus4-bam/frontdoor/index/index/docId/35125 AN - OPUS4-35125 SN - 0023-4753 SN - 1521-4079 SN - 0232-1300 VL - 50 IS - 12 SP - 967 EP - 973 AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany