TY - JOUR A1 - Procop, Mathias A1 - Klein, A. A1 - Rechenberg, I. A1 - Krüger, D. T1 - AES Depth Profiling of Semiconducting Epitaxial Layers with Thicknesses in the Nanometre Range Using an Ion Beam Bevelling Technique JF - Surface and interface analysis KW - AES KW - Depth profiling KW - Ion beam bevelling PY - 1997 SN - 0142-2421 SN - 1096-9918 VL - 25 SP - 458 EP - 463 PB - Wiley CY - Chichester AN - OPUS4-7098 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -