TY - JOUR A1 - Ermilova, Elena A1 - Weise, Matthias A1 - Hertwig, Andreas T1 - Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H-SiC layers JF - Journal of the European Optical Society-Rapid Publications N2 - Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control. T2 - EOS Annual Meeting (EOSAM 2022) CY - Porto DA - 12.09.2022 KW - Imaging ellipsometry KW - White light interference microscopy KW - 4H–SiC KW - Defects PY - 2023 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-574209 DO - https://doi.org/10.1051/jeos/2023018 SN - 1990-2573 VL - 19 IS - 1 SP - 1 EP - 8 PB - EDP Sciences AN - OPUS4-57420 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -