TY - JOUR A1 - Ecker, Klaus A1 - Wätjen, U. A1 - Berger, Achim A1 - Persson, L. A1 - Pritzkow, Wolfgang A1 - Radtke, Martin A1 - Riesemeier, Heinrich T1 - RBS, SY-XRF, INAA and ICP-IDMS of antimony implanted in silicon - A multi-method approach to characterize and certify a reference material T2 - Nuclear instruments and methods in physics research B N2 - A layer of Sb atoms, implanted with an energy of 400 keV and a nominal dose of 5×1016 atoms/cm2 into a high purity silicon wafer, was certified for its areal density (atoms/cm2) using Rutherford backscattering spectrometry (RBS), instrumental neutron activation analysis (INAA) and inductively coupled plasma isotope dilution mass spectrometry (ICP-IDMS) and for its isotope ratio using INAA and ICP-IDMS. Excellent agreement between the results of the different independent methods was found. In the present work, the measurements of the homogeneity of the areal density of Sb, previously determined with RBS in spots having 1 mm diameter, are improved with synchrotron X-ray fluorescence analysis: Higher precision in even smaller sample spots allows to estimate a reduced inhomogeneity of the whole batch of samples of the order of only 0.4%. Thus the uncertainty of the certified value can further be reduced. Down to fractions of a chip with 0.3×0.4 mm2 area, the areal density is now certified as (4.81±0.06)×1016 Sb atoms/cm2, where the expanded uncertainty 0.06 (coverage factor k=2) corresponds to only 1.2%. The relative merits of the different analytical methods are discussed. PB - Elsevier CY - Amsterdam KW - Certified reference material KW - RBS KW - INAA KW - ICP-IDMS KW - XRF KW - SY-XRF PY - 2002 UR - https://opus4.kobv.de/opus4-bam/frontdoor/index/index/docId/13870 AN - OPUS4-13870 SN - 0168-583X SN - 1872-9584 VL - 188 IS - 1-4 SP - 120 EP - 125 AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany