TY - JOUR A1 - Unger, Wolfgang A1 - Gross, Thomas A1 - Lippitz, Andreas A1 - Güttler, B. T1 - Uncertainty in measurement of overlayer thickness of thermally oxidized silicon using x-ray photoelectron spectroscopy JF - Surface and interface analysis N2 - Overlayers of SiO2 (nominally 4, 6 and 8 nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these overlayers was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxide overlayer by applying an appropriate quantitative model. The uncertainty budget of that thickness measurement method is given. The relative combined standard uncertainty of the method was found to be 15%. The effective attenuation lengths or the corresponding electron inelastic mean free paths are of considerable importance for both the estimated values of overlayer thickness and combined standard uncertainties. The XPS results were compared with ellipsometry data. KW - XPS KW - ESCA KW - Uncertainty KW - Overlayer KW - SiO2 PY - 2000 DO - https://doi.org/10.1002/1096-9918(200012)29:12<891::AID-SIA943>3.0.CO;2-A SN - 0142-2421 SN - 1096-9918 IS - 29 SP - 891 EP - 894 PB - Wiley CY - Chichester AN - OPUS4-1075 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -