TY - JOUR A1 - Krüger, Jörg A1 - Bonse, Jörn A1 - Lenzner, Matthias T1 - Modification and Ablation of Semiconductors by Femtosecond Laser Pulses T2 - Recent research developments in applied physics N2 - Physical and chemical phenomena resulting from irradiation of silicon and indium phosphide with ultrashort laser pulses (~100fs) were investigated with respect to the difference between single- and multiple-pulse treatment. In the single-pulse case, several processes were identified: modification, recrystallization and ablation. All processes exhibit a distinct treshold behaviour. A two photon-absorption coefficient can be determined from a single spatial ablation profile. Accumulation effects were observed for multi-pulse illumination. Different morphological features like bubbles, rippels and microcolumns were found. PB - Transworld Research Network CY - Trivandrum PY - 2002 UR - https://opus4.kobv.de/opus4-bam/frontdoor/index/index/docId/1585 AN - OPUS4-1585 VL - 5 IS - 2 SP - 437 EP - 461 AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany