TY - JOUR A1 - Bonse, Jörn A1 - Mann, Guido A1 - Krüger, Jörg A1 - Marcinkowski, M. A1 - Eberstein, M. T1 - Femtosecond laser-induced removal of silicon nitride layers from doped and textured silicon wafers used in photovoltaics T2 - Thin solid films N2 - The removal of a 75- to 90-nm-thick passivating silicon nitride antireflection coating from standard textured multicrystalline silicon photovoltaic wafers with a typical diffused 90-Ω/sq-emitter upon irradiation with near-infrared femtosecond laser pulses (790 nm central wavelength, 30 fs pulse duration) is studied experimentally. The laser irradiation areas are subsequently characterized by complementary optical microscopy, scanning electron microscopy and depth profiling chemical analyses using secondary ion mass spectrometry. The results clarify the thin-film femtosecond laser ablation scenario and outline the process windows for selective antireflection coating removal. PB - Elsevier CY - Amsterdam KW - Photovoltaics KW - Solar cell KW - Laser processing KW - FS-laser ablation KW - Silicon nitride PY - 2013 UR - https://opus4.kobv.de/opus4-bam/frontdoor/index/index/docId/28874 AN - OPUS4-28874 SN - 0040-6090 VL - 542 SP - 420 EP - 425 AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany