TY - JOUR A1 - Acosta-Zepeda, C. A1 - Saavedra, P. A1 - Bonse, Jörn A1 - Haro-Poniatowski, E. T1 - Modeling of silicon surface topographies induced by single nanosecond laser pulse induced melt-flows T2 - Journal of Applied Physics N2 - Irradiation with a single nanosecond laser pulse in the melting regime can result in a characteristic change in the surface morphology of crystalline silicon. This has been verified experimentally in a variety of situations, where dimple-shaped surface topographies are produced. In this work, the dimple height, depth, and width are modeled following and extending in a more rigorous manner the approach of Wood and Giles [Phys. Rev. B 23, 2923–2942 (1981)] and that of Schwarz-Selinger and coworkers [Phys. Rev. B 64, 155323 (2001)], upon varying the laser irradiation parameters such as peak energy density, pulse duration, and wavelength. This is achieved with numerical simulations of one-dimensional heat flow as input to the analytical fluid-flow equations. PB - AIP Publishing CY - Melville, USA KW - Nanosecond laser KW - Melting KW - Silicon KW - Fluid-flow PY - 2019 UR - https://opus4.kobv.de/opus4-bam/frontdoor/index/index/docId/47927 AN - OPUS4-47927 SN - 0021-8979 SN - 1089-7550 VL - 125 IS - 17 SP - 175101-1 EP - 175101-9 AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany