TY - JOUR A1 - Bonse, Jörn A1 - Rudolph, Pascale A1 - Krüger, Jörg A1 - Baudach, Steffen A1 - Kautek, Wolfgang T1 - Femtosecond pulse laser processing of TiN on silicon T2 - Applied surface science N2 - Ultrashort pulse laser microstructuring (pulse duration 130 fs, wavelength 800 nm, repetition rate 2 Hz) of titanium nitride (TiN) films on silicon substrates was performed in air using the direct focusing technique. The lateral and vertical precision of laser ablation was evaluated. The TiN ablation threshold changed with the number of pulses applied to the surface due to an incubation effect. An ablation depth per pulse below the penetration depth of light was observed. Columnar structures were formed in the silicon substrate after drilling through the TiN layer. PB - North-Holland CY - Amsterdam KW - Femtosecond laser ablation KW - Titanium nitride KW - Silicon KW - Optical properties PY - 2000 UR - https://opus4.kobv.de/opus4-bam/frontdoor/index/index/docId/802 AN - OPUS4-802 SN - 0169-4332 SN - 1873-5584 VL - 154-155 SP - 659 EP - 663 AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany