TY - JOUR A1 - Ziegler, Mathias A1 - Hempel, M. A1 - Larsen, H. E. A1 - Tomm, J. W. A1 - Andersen, P. E. A1 - Clausen, S. A1 - Elliott, S. N. A1 - Elsaesser, T. T1 - Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage JF - Applied physics letters N2 - The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns time scale which is determined by the accumulation of excess energy absorbed from the optical output. We identify regimes in which COD is avoided by the proper choice of operation parameters. KW - Semiconductor laser KW - Thermography KW - Catastrophic optical damage KW - High-power diode lasers PY - 2010 DO - https://doi.org/10.1063/1.3463039 SN - 0003-6951 SN - 1077-3118 VL - 97 IS - 021110 SP - 1 EP - 3 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-21741 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -