Refine
Year of publication
Document Type
Way of publication
- Open Access (1)
Keywords
- silicon (28)
- etching (15)
- Raman spectroscopy (10)
- lattice strain (10)
- confocal microscopy (9)
- solar cell (6)
- Raman microscopy (5)
- boron (5)
- NMC (4)
- Raman (4)
- chemical analysis (4)
- hydrofluoric acid (4)
- reactivity (4)
- recycling (4)
- ICP-OES (3)
- degradation (3)
- diatomic molecule (3)
- dissolution (3)
- hydrogen (3)
- lithium ion battery (3)
- mass spectrometry (3)
- Acidic etching (2)
- AlF (2)
- Confocal microscopy (2)
- Recycling (2)
- SEM-EDX (2)
- cathode (2)
- copper silicide (2)
- direct synthesis (2)
- impurity (2)
- kinetics (2)
- leaching (2)
- lithium (2)
- mechanism (2)
- mechanochemistry (2)
- molecular absorption spectrometry (2)
- nitric acid (2)
- phosphorus (2)
- 11B-NMR (1)
- AAS (1)
- ASR; quartzite; Raman microscopy; surface analysis (1)
- Activation energy (1)
- AlF3 (1)
- AlO (1)
- Analytical chemistry (1)
- Batterie (1)
- C2H2/N2O flame (1)
- Diamond wire sawing (1)
- Edelmetalle (1)
- Eisen (1)
- Elektroschrott (1)
- Feststoffanalytik (1)
- Feststoffstandard (1)
- Funktionelles Recycling (1)
- Graphitrecycling (1)
- Graphitrohr (1)
- HF/HNO3 mixture (1)
- Interferenz (1)
- Interferenzen (1)
- LIBS (1)
- Laugung (1)
- Li-Ionen-Traction Batteries (1)
- Lift-off structuring (1)
- Lithium (1)
- Lithium-Ionen-Batterien (1)
- Lithium-Ionen-Battery (1)
- Lithiumbatterie (1)
- Magnetron sputtering (1)
- Matrixeffekte (1)
- Mikrowellenaufschluss (1)
- NMC-Re-use (1)
- Nickel-Mangan-Cobalt-Oxid (1)
- Palladium (1)
- Platin (1)
- Präzisionsanalytik (1)
- REM-EXD (1)
- Raman-Spektroskopie (1)
- Reflectivity (1)
- Rhodium (1)
- SAW devices (1)
- Si-Al melt (1)
- Slurry sawing (1)
- Surface morphology (1)
- Surface properties (1)
- Texturisation (1)
- Tungsten electrodes (1)
- Wet-chemical etching (1)
- acidic etching (1)
- acidic texturization (1)
- air-acetylene flame (1)
- aluminum monofluoride (1)
- antenna (1)
- continuum source (1)
- continuum source AAS (1)
- copper (1)
- crystallization (1)
- cuprous chloride (1)
- deposition (1)
- digestion (1)
- discharge (1)
- dissociation (1)
- electroless deposition (1)
- electromobility (1)
- etch rate (1)
- flame molecular absorption spectrometry (1)
- fluorine determination (1)
- gas analysis (1)
- hexafluorosilicic acid (1)
- hexafluosilicic acid (1)
- high resolution continuum source absorption spectrometry (1)
- high silicon matrix (1)
- high-precision chemical analysis (1)
- high-resolution continuum source absorption spectrometry (1)
- high-temperature (1)
- hydrometallurgy (1)
- impurities (1)
- inductively coupled plasma emission spectroscopy (1)
- intermetallic compounds (1)
- lithium battery (1)
- materials (1)
- mechanical activation (1)
- mechanical stress (1)
- metal assisted etching (1)
- metal deposition (1)
- metal-assisted etching (1)
- microwave-assisted digestion (1)
- molecular emission spectrometry (1)
- molecular hydrogen (1)
- multi-crystalline silicon (1)
- multi-wire sawing (1)
- multiple standard addition (1)
- nickel manganese cobalt oxide (1)
- nickel–manganese–cobalt oxide (1)
- nitrogen oxide (1)
- nitrogen oxides (1)
- nitrous gases (1)
- non-spectral interference (1)
- nuclear magnetic resonance (1)
- oxidation (1)
- phase transition (1)
- platinum film (1)
- reaction kinetics (1)
- reaction mechanism (1)
- reflectivity (1)
- relaxation (1)
- removal (1)
- saw damage (1)
- segregation (1)
- solar cell parameter (1)
- solidification (1)
- species (1)
- species fragmentation (1)
- stoichiometry (1)
- stress (1)
- stress field (1)
- tetrafluoro boric acid (1)
- texturization (1)
- thermal treatment (1)
- topography (1)
- trace element (1)
- transition-metal diboride (1)
- trifluoro acetic acid (1)
- wireless SAW sensor (1)
Institute
BTU
One of the most common methods to analyse silicon materials is Raman-spectroscopy.[1] More recently there is a focus in the analysis of lattice deformations during sample preparations.[2] These deformations not only increase the chance of crack formation but also increases the chemical reactivity of the silicon towards etch processes or oxidation processes.[3] In this contribution, we will present our latest results on the influence of lattice deformations induced by scratches and saw damage on the etch rate of potassium hydroxide. The lattice deformation will be measured using Raman-microscopy and correlated with the height difference measured with confocal microscopy. It will be shown that the etch rate strongly depends on the lattice deformation and that the etch rate will increase by up to the factor 10 in areas with tensile deformation.
The present study is focused on the question of how lattice strain mechanically introduced into silicon alters the chemical reactivity of the silicon atoms that are affected by the strain field on a microscopic length scale. The magnitude and local distribution of lattice strain are extracted from confocal Raman microscopy measurements. The reactivity of Si is expressed by the etch rate of Si after treatment with HF–HNO3–H2SiF6 mixtures. Then, the local etch rate is calculated from the local etch depth as determined by confocal microscopy. It has been found that tensile strain leads to the highest enhancement of the etch rate, followed by a compressive strain increase in the etch rate.
The stoichiometry and kinetics of wet chemical etching of silicon in HF/HNO3 and HF/HNO3/H2SiF6 mixtures was investigated. The side reactions and main reaction pathways were identified by quantifying all reaction products. The relationship between the concentration of undissociated HNO3 and the consumption of HNO3, as well as the formation of H2 as a function of the mixing ratios were found by varying the etching mixture composition systematically.
Based on the etching rates determined, kinetic models for the reaction- and diffusion-controlled reaction mechanism are presented as well as the interrelation between the etchant composition and the transition between reaction- and diffusion-controlled etching.