FG Physikalische Chemie
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- silicon (28)
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- lattice strain (10)
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Localized deposition of indium on an amorphous glass surface covered with a thin molybdenum layer is demonstrated utilizing laser-assisted chemical vapor deposition. A continuous-wave laser causes a temperature rise on the molybdenum layer resulting in the selective aggregation of liquid and ultimately crystalline structures of indium. The formation sites of the indium are determined by the decomposition of gaseous trimethylindium. The deposited indium islands can serve as precursors and could be further processed into compound semiconductors like CuInSe2 for micro-concentrator solar cells. The experimental investigations were supported by theoretical simulations of the laser heating process to calculate the local temperature distribution on the surface of the molybdenum-covered glass substrate.
This review provides a summary of the existing literature on a crucial raw material for the production of isotopically pure semiconductors, which are essential for the development of second-generation quantum systems. Silicon-28-tetrafluoride (28SiF4) is used as an educt for several isotope-engineered chemicals, such as silane-28 (28SiH4) and silicon-28-trichloride (28SiHCl3), which are needed in the pursuit of various quantum technologies. We are exploring the entire chain from the synthesis of 28SiF4 to quantum applications. This includes the chemical properties of SiF4, isotopic enrichment, conversion to silanes, conversion to bulk 28Si and thin films, the physical properties of 28Si (spin neutrality, thermal conductivity, optical properties), and the applications in quantum computing, photonics, and quantum sensing techniques.
The present study deals with the phenomenological observation of the corrosion of the positive electrode foil of lithium-ion batteries containing LiNi0.6Co0.2Mn0.2O2 (NMC) as cathode material. Due to the presence of moisture, localized water accumulation is formed on the NMC surface. The water absorbed by the electrolyte reacts with the NMC under Li+/H+ exchange and the resulting pH increase leads to dissolution of the carrier foil and characteristic salt-like blooms on the NMC surface. With the increase in the relative area occupied by the holes in the aluminum foil per time, a sufficiently suitable parameter was found with which to quantitatively determine the extent of corrosion. The degree of degradation depends on time and ambient humidity. It was shown that functional recycling with the water jet method is no longer applicable for degraded foils, since the mechanical stability of the foils decreases as corrosion progresses. Lithium, aluminum, sulfur and oxygen were detected in the blooms using SEM–EDX and Laser-Induced-Breakdown-Spectroscopy (LIBS). The underlying NMC layer was found to contain mainly aluminum and significantly lower lithium content than the non-degraded material. SEM and Raman microscopy analyses also showed that the active material is also locally degraded and therefore no longer suitable for functional recycling.
The mechanical processing of silicon wafers leads to a heterogeneous lateral strain distribution and various modifications of the silicon, both of which influence the resulting topography after acid etching. In this study we investigate the influence of local strains and the initial topography of slurry and diamond wire saw wafers on the acid etching mechanism. The strain distribution is quantified and qualified by Raman microscopy before and after thermal treatment, while the topography is characterized by confocal microscopy before and after etching. The thermal treatment was used to selectively relax strains and investigate the effect of the individual strains on the etching mechanism. We found that amorphous silicon and compressive strained silicon are mainly present on the top most surface of the saw damage and do not influence the chemical reactivity of acid etching. In contrast, highly reactive tensile strained silicon is found up to 2.7 μm deep in the saw damage and acts as an etching mask. Rapid etching of the tensile strained silicon by HF/HNO3/H2SiF6 leads to the formation of cracks with high local concentrations of intermediate species. These strains induced cracks are etched out together with the original saw damage induced cracks and trenches and form the final surface after etching. Furthermore, we can show how the tensile strain strength must have a relative Raman shift of at least −2 cm−1 to have an effect on the local etch rate. Our data demonstrate how mechanical treatment in combination with thermal treatment and acidic etching can be used to optimize the resulting topography for applications like photovoltaics. In addition, it provides a deeper insight into the acid etching mechanism for non-planar silicon wafers.