Prof. Nachrichtentechnik
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High-power GaInP/GaAs HBTs with high breakdown voltage for X-band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic amplifier is realized. For a single 12-finger device with 2/spl times/70 /spl mu/m/sup 2/ emitter finger size, an output power of 3.2 W at 9 GHz with 47% PAE is achieved.
This paper investigates the impact of possible parameter extraction errors caused by inaccurate definition of the calibration reference impedance of in-situ multiline TRL. Two calibration sets implemented on GaAs and Si/SiGe:C wafer processes were quantitatively analyzed. Obtained results demonstrated that for most practical cases, the desired 5%-level of confidence of extracted parameters of high-reflective devices can easily be achieved without additional efforts. Thus, implementation of the in-situ TRL into a characterization workflow of high-performance microwave devices can be significantly simplified.
The uncertainty calculation for on-wafer 1-port S-Parameter measurements due to the uncertainty of coplanar on-chip calibration standards is presented. Analytical expressions for the sensitivities are used and applied for typical fabrication tolerances of monolithic integrated on-chip structures. The method is verified for OSM calibration by means of simulations with a commercial calibration software as well as by measurements, where test-structures with artificial errors were used. In each case the analytically calculated deviation is compared to a numerical approach and good agreement is found. All results are given for a MMIC process on GaAs, but can be adopted for other technologies.