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Institute
Physica Status Solidi : C
(2015)
Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers
(2015)
Light Induced Crystallization of an Amorphous Silicon Film Embedded Between Silicon Oxide Layers
(2014)
A power amplifier for a frequency range of 11-13 GHz that is incorporated in 0.35 μm SiGe-technology is presented in this letter. The two-stage push-pull amplifier uses monolithically integrated transformers for input and interstage matching and a monolithically integrated modified LC-balun as an output-matching network. For stabilization purposes and gain improvement in the operating frequency range a passive frequency selective feedback in parallel to the base-collector was introduced. The power amplifier is mounted on a 7 × 7 mm VQFN package. From a single 1.8 V voltage supply, the amplifier has a power-added efficiency of greater than 30% from 11.2 to 13 GHz with a maximum of 37.3% at 12.5 GHz. The maximum output power is 23.4 dBm (saturation), as measured in the continuous mode.
A cascode amplifier stage with an isolated NLDMOS and SiGe:C HBT was demonstrated. The main advantages of that circuitry concept are a reduced capacitive portion of the input impedance and a significantly increased power gain in comparison to a single NLDMOS amplifier stage. Additionally a more stable input impedance for different RF input power levels can be obtained. The stable and less capacitive input impedance simplifies the design of integrated impedance matching networks. In a first feasibility study a circuit with a NLDMOS gate width of 90 μm showed a maximum gain of 18 dB and a maximum output power of 10 dBm at 11 GHz. To the authors knowledge the circuit concept of a cascode amplifier containing a HBT and an isolated NLDMOS is presented for the first time.
This paper presents a low noise amplifier (LNA) with differential output using a passive frequency selective feedback. The introduced feedback stabilizes the amplifier at lower frequencies and improves the gain in the desired frequency band. The LNA consists of two stages. Additionally, a buffer at the output is added for measurements. The amplifier was implemented in a 0.35 μm SiGe technology. For measurements the LNA was bonded to a substrate. A peak gain of 28.1 dB and a minimum noise figure of 2.2 dB at a supply voltage of 3 V were achieved.
Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer
(2005)
A Monolithic 2.4 GHz, 0.13 um CMOS Power Amplifier with 28 dBm Output Power and PAE at 1.2 V Supply
(2004)