JP Photovoltaik
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- electronic surface structure (2)
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The electronic structure of the interface between the boron-doped oxygenated amorphous silicon “window layer” (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon (μc-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (−2.87 ± 0.27) eV and (−3.37 ± 0.27) eV, respectively. A lower tunnel junction barrier height at the μc-Si:H(B)/ZnO:Al interface compared to that at the a-SiOx:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a μc-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.
Resonant inelastic soft x-ray scattering (RIXS) was used to study the electronic structure of solid
cysteine films. A RIXS map approach, i.e., plotting the x-ray emission intensity as a function of
excitation and emission energy, allows us to separate the contributions of the three chemically nonequivalent
carbon atoms in cysteine. In particular, we can identify orbitals localized near the photoexcited
atoms, as well as orbitals that are delocalized over the entire molecule.
The surface properties of CuInS 2 (CIS) thin-fi lm solar cell absorbers are
investigated by a combination of electron and soft X-ray spectroscopies.
Spatially separated regions of varying colors are observed and identifi ed to
be dominated by either CuS or Cu 2 S surface phases. After their removal by
KCN etching, the samples cannot be distinguished by eye and the CIS surface
is found to be Cu-defi cient in both regions. However, a signifi cantly more
pronounced off-stoichiometry in the region initially covered by Cu 2 S can be
identifi ed. In this region, the resulting surface band gap is also signifi cantly
larger than the E g Surf of the initially CuS-terminated region. Such variations
may represent a hidden parameter which, if overlooked, induces irreproducibility
and thus prevents systematic optimization efforts.
The chemical and electronic properties of a-
Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar cell structures
are studied by hard X-ray photoelectron spectroscopy (HAXPES).
Using a combination of different X-ray excitation energies
and deliberate sample design, we were able to select the probed
volume, i.e., the silicon capping layer only or the silicon and zinc
oxide layer (including the buried interface). For the a-Si:H(B) material,
we find a higher deposition rate and a smaller value for the
modified Auger parameter than for μc-Si:H(B). In addition, we
find indications of a pronounced band bending limited to the very
surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more
distinct in the latter case.
The valence band structures (VBS) of eight
transition metals (Fe, Co, Ni, Cu, Pd, Ag, Pt, Au) were
investigated by photoelectron spectroscopy (PES) using He I,
He II, and monochromatized Al Kα excitation. The influence
of final states, photoionization cross-section, and adsorption of
residual gas molecules in an ultrahigh vacuum environment are
discussed in terms of their impact on the VBS. We find that
VBSs recorded with monochromatized Al Kα radiation are
most closely comparable to the ground state density of states
(DOS) derived from quantum mechanics calculations. We use
the Al Kα-excited PES measurements to correct the energy scale of the calculated ground-state DOS to approximate the “true”
ground-state d-band structure. Finally, we use this data to test the d-band center model commonly used to predict the electronicproperty/
catalytic-activity relationship of metals. We find that a simple continuous dependence of activity on d-band center
position is not supported by our results (both experimentally and computationally).
The μm-scale spatial distribution of the elements of polycrystalline Cu(In1− x Ga x )Se2 absorber surfaces is examined using x-ray photoelectron emission microscopy. The chemical composition varies from grain to grain, and a direct, linear anticorrelation between the In 3d and Ga 2p photoemission line intensities is observed. The line intensities are interpreted in terms of a varying value of x= Ga/(In+ Ga); the band gaps calculated from the inferred compositions of the grains are shown to be normally distributed with a standard deviation of 40 meV.
In this paper, X-ray photoelectron and X-ray-excited
Auger electron spectroscopy was used to investigate the chemical
surface structure of CuInS2 thin-film solar cell absorbers.We find
that the [In]/[Cu] surface composition can vary between 1.6 (±0.4)
and 3.7 (±0.7), depending on relatively minor variations in the absorber
formation process and/or whether additional wet-chemical
treatments are performed. These variations are primarily due to
differences in the Cu surface concentration. The corresponding
change of the modified In Auger parameter is interpreted as being
indicative of a change in the chemical environment of In as a
function of Cu off-stoichiometry.
Resonant inelastic soft X-ray scattering (RIXS) has been used to study the
electronic structure of glycine and lysine in aqueous solution. Upon variation of the pH
value of the solution from acidic to basic, major changes of the nitrogen K edge RIXS data
are observed for both amino acids, which are associated with the protonation and
deprotonation of the amino groups. The experimental results are compared with
simulations based on density functional theory, yielding a detailed understanding of the
spectral changes, as well as insights into the ultrafast proton dynamics in the intermediate
core-excited/ionized state of the RIXS process.