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Zinc oxide is a promising wide band gap semiconductor for future optoelectronic devices. Today ZnO bulk single crystals are grown by three different techniques: hydrothermally, from the melt, and by chemical vapor transport. For our studies, the authors employed in addition a simple and low cost vapor phase method which gives us good quality crystals and flexibility in crystal doping. The as-grown needle-shaped single crystals were characterized by resistivity measurements, scanning electron microscopy, electron backscatter diffraction, and low temperature photoluminescence spectroscopy.