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The process parameters’ impact of the plasma-enhanced atomic layer deposition (PE-ALD) method on the oxygen to nitrogen (O/N) ratio in titanium oxynitride (TiOxNy) films was studied. Titanium(IV)isopropoxide in combination with NH3 plasma and tetrakis(dimethylamino) titanium by applying N2 plasma processes were investigated. Samples were characterized by the in situ spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and electrical characterization (current–voltage: I-V and capacitance–voltage: C-V) methods. The O/N ratio in the TiOxNy
films is found to be very sensitive for their electric properties such as conductivity, dielectric breakdown, and permittivity. Our results indicate that these PE-ALD film properties can be tuned, via the O/N ratio, by the selection of the process parameters and precursor/coreactant
combination.
Titanium oxynitride films are prepared by plasma enhanced atomic layer deposition method using two different precursors and nitrogen sources. Synchrotron radiation-based X-ray photoelectron spectroscopy and X-ray absorption spectroscopy are used to characterize the nitrogen species incorporated
within these films depending on the deposition parameters.
It is found that nitrogen atoms in these films are differently bonded. In particular, it can be distinguished between Ti-ON and Ti-N bonding configurations and molecular nitrogen species caused by precursor fragments.
Organic-inorganic lead halide perovskites have emerged as very attractive absorber materials for the fabrication of low cost and high efficiency solar cells, but a delicate nature of these films is one of the main challenges for a successful commercialization. Typically, when exposed to air or moisture, perovskite films degrade within a couple of hours or days. Moreover, the methylammonium lead triiodide (CH₃NH₃PbI₃) perovskite cannot sustain a prolonged annealing at temperatures around 85∘C. In this work, we are investigating stability (upon air and thermal exposure) of a CH₃NH₃PbI₃ perovskite film coated with a thin layer of Al₂O₃ deposited by atomic layer deposition
(ALD). In particular, the chemical and electronic changes occurred at the Al₂O₃/CH₃NH₃PbI₃ interface during the first 50 ALD cycles were monitored ex-situ by high-resolution and surface-sensitive synchrotron-based X-ray photoelectron spectroscopy (SR-XPS). The advantage of the ALD as a deposition method is that it can produce extremely dense layers with a very precise thickness control at room temperature. Detailed SR-XPS data analysis and a stability test of the perovskite film with alumina will be presented.
Atomic layer deposition of Al2O3 on CH3NH3PbI3 for enhancement of perovskite solar cells stability
(2016)
Over the past few years, a wide range of device architectures employing organic-inorganic metal halide perovskite absorbers has been reported, with efficiencies exceeding 20%. Despite the tremendous progress, a number of key issues must be resolved before the wide-spread com-
mercialization will be possible. Some of the primary challenges include lead toxicity, long-term stability, and fast degradation upon exposure to humid atmosphere. Recent computational and experimental studies suggest that hybrid metal-halide perovskites act as an ionic-electronic conductor. The study of vacancy-mediated migration of I−, Pb2+ and CH3NH3− ions and their relative activation energies suggests that migration of halide vacancies, to and from the interfaces in the solar cell during its operation, is the main conduction mechanism. In this work, we are presenting high resolution synchrotron-based spectroscopic study, which indicates that the contribution of nitrogen into the conduction mechanism of methyl ammonium lead iodide-based (CH3NH3PbI3) perovskite films should not be neglected. The N1s core level and resonant X-ray photoelectron spectroscopy at the N1s-egde of the CH3NH3PbI3 films are discussed in detail.
Charakterisierung von TiO2-ALD-Schichten und deren Nutzung für die Passivierung von Si-Photokathoden
(2015)
Wir berichten zunächst über den Einfluss der Methode der Atomlagenabscheidung auf die TiO2-Schichteigenschaften. Insbesondere wird der Zusammenhang zwischen Ti3+- sowie Interbandzuständen mit elektrischen Kennlinien und deren Einfluss auf funktionale Schichteigenschaften diskutiert. Anschließend werden Mikrostrukturierung, Grenzflächen-Engineering und konforme Abscheidung einer TiO2-ALD-Schutzschicht effektiv zur Performance-Steigerung von p-Si-Photokathoden angewendet.