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Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO2
substrates by molecular beam epitaxy using gold (Au) as the solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with an Au nuclei density
below 0.25 μm−2 on the surrounding silicon oxide (SiO2). The initial growth of Ge NWs starting from Si–Au droplets with SixGe1−x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within ⟨110⟩ directions on the substrate and NWs were mainly bounded by two 55◦ inclined 111 facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of x-ray diffraction measurements.
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(2012)
X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates
(2013)