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Self-organized pattern formation upon femtosecond laser ablation by circularly polarized light
(2006)
Guest Editors Preface
(2006)
Multipulse feedback in self-organized ripples formation upon femtosecond laser ablation from silicon
(2010)
Scanning Kelvin probe and photoemission electron microscopy of organic source-drain structures
(2004)
Ultra short laser pulse ablation from sodium chloride - the role of laser induced color centers
(2002)
Nonlinear Characterization of the Surface of Silicon Wafers: In-situ Detection of External Stress
(2000)
We present new results on femtosecond LIPSS on silicon, fostering the dynamic model of self-organized structure formation. The first set of experiments demonstrates LIPSS formation by irradiation with a femtosecond white light continuum. The ripples are, as usual, perpendicular to the light polarization with a fluence-dependent wavelength between 500 and 700 nm. At higher dose (fluence × number of shots), the LIPSS turn to much coarser structures. The second set of experiments displays the dose dependence of pattern evolution at about threshold fluence. In contrast to the general case of multi-pulse LIPSS, where a strong dependence of the structures on the laser polarization is observed, single-shot exposition of silicon at about the ablation threshold results in a concentric pattern of very regular sub-wavelength ripples following the oval shape of the irradiated spot, without any reference to the laser polarization. When increasing the number of pulses, the usual, typical ripples develop and then coalesce into broader perpendicular structures, interlaced with remnants of the first, finer ripples.
Efficient instantaneous optical switching and frequency conversion on a femtosecond time scale
(2002)
n order to optimize organic field effect transistors (OFETs), the characterisation of active-layer surfaces in terms of their roughness, chemical composition and distribution of surface potentials is important. We report on high-resolution microscopic mapping of organic source-drain structures with P3HT as the semiconductor by scanning Kelvin probe microscopy (SKPM) and photoemission electron microscopy (PEEM). It was shown that PEEM is able to characterise the surface morphology (roughness), the chemical homogeneity and the composition of organic structures. The two-dimensional mapping of surface potentials by SKPM with applied source-drain voltages is shown to be an important ingredient of OFETs failure mode analysis.
Formation of coherent laser induced periodic surface structures (LIPSS) on stainless steel type 316L by 100 fs laser pulses at 800 nm wavelength is investigated. Specifically focusing on the large area treatment, effect of the irradiation dose (fluence × pulse number) on the uniformity of the morphology, orientation of the ripples respect to the laser polarization and their periodicity is studied systematically. Controlling the pulse number via varying the scanning speed, the difference between irradiating one particular dose in single scan with its irradiation in separate steps is inspected. Results clearly point out that not only the irradiation dose but also the irradiation way and the time delay between the pulse trains might have a significant effect on the final outcomes. It is discussed in detail that the experimental observations are supporting the model of self-organized structure formation due to irradiation induced instability.
The controlled dynamics of liquid drops via generation of specific wetting states on a solid surface is of great interests both in the fundamental and applied sciences. Considering that the wettability is strongly dependent on the surface topography and surface roughness, we investigate – through experiments and theory – the effect of laser-induced periodic surface structures (LIPSS) generated on silicon (100) targets as a control parameter of wetting properties. To obtain structured silicon surfaces with different morphological features, we patterned the surface by irradiation with femtosecond pulses from an amplified Ti:Sapphire laser system (790 nm/100 fs/1 kHz) at a fluence in the range of 0.4–1.2 J/cm2 on a spot with a diameter about of 100 μm. Variation of the applied irradiation dose results in surface modifications with the roughness about of a few tens of nanometers are ranging from regular LIPSS patterns with the lateral period of about 500–700 nm to complex agglomerations of 3-D microstructures with several-μm feature size. The theoretical study on the correlation of wetting properties with the surface topography has been performed within a phase field model. We found an excellent agreement of numerical results with experiments.
Efficient instantaneous optical switching and frequency conversion on a femtosecond time scale
(2003)
Electrical Properties of Laser-Ablation-Initiated Self-Organized Nanostructures on Silicon Surface
(2006)