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Beleniotis, Petros
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Rudolph, Matthias
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Krause, Sascha
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Localization of Trapping Effects in GaN HEMTs with Pulsed S-parameters and Compact Models
(2022)
Beleniotis, Petros
;
Schnieder, Frank
;
Chevtchenko, Serguei A.
;
Rudolph, Matthias
Dynamic RD Modeling by Exploiting Gate Current Dependency of Virtual Gate Effect
(2023)
Beleniotis, Petros
;
Zervos, Christos
;
Schnieder, Frank
;
Rudolph, Matthias
An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT
(2022)
Beleniotis, Petros
;
Schnieder, Frank
;
Krause, Sascha
;
Haque, Sanaul
;
Rudolph, Matthias
On the Influence of Transistor Dimensions on the Dispersive Behavior in A1GaN/GaN HEMT-Based PAs and Robust LNAs
(2022)
Krause, Sascha
;
Zervos, Christos
;
Beleniotis, Petros
;
Ritter, Dan
;
Rudolph, Matthias
;
Heinrich, Wolfgang
The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs
(2023)
Zervos, Christos
;
Beleniotis, Petros
;
Krause, Sascha
;
Ritter, Dan
;
Rudolph, Matthias
Statistical Medeling of GaN HEMTs by Direct Transfer of Veriations to Model Parameters
(2022)
Beleniotis, Petros
;
Chevtchenko, Serguei A.
;
Rudolph, Matthias
Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive
(2021)
Krause, Sascha
;
Beleniotis, Petros
;
Bengtsson, Olof
;
Rudolph, Matthias
;
Heinrich, Wolfgang
Simulating Drain Lag of GaN HEMTs with physics-based ASM Model
(2021)
Beleniotis, Petros
;
Schnieder, Frank
;
Rudolph, Matthias
1
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8
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