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A spectro-microscopic approach to study the morphology and elemental distribution of mc-Si surfaces
(1999)
The initial stages of porous Si formation on Si(111) in dilute ammonium fluoride solution are analysed by photoelectron spectroscopy using synchrotron radiation (SRPES). The PES results in the por-Si formation regime partly support a recent dissolution model. The contribution from the Si 2p surface core level shift shows that 0.35 ML of the surface is still H-terminated after interruption of the conditioning process at the first photocurrent maximum. Two signals shifted in binding energy by 0.8 and 1 eV, respectively, are attributed to reaction intermediates expected from the proposed reaction mechanism and from theoretical calculations using density functional theory (DFT). A distinct roughening is found in in-situ AFM measurements, with a calculated RMS roughness parameter of 2.6 nm.
The oxide of Si(111) formed by electropolishing in dilute ammonium fluoride solution is analysed by photoelectron spectroscopy using synchrotron radiation. The oxidiclayer is about 3.1 nm thick and contains Si-F-x species as well as oxyfluorides. The oxyfluorides are found preferentially at the electropolishing layer surface. SiOHspecies are concentrated at the oxidic film/substrate interface. The full width half maximum of the Si 2p line indicates that the Si/electropolishing oxide interface issmoother than the Si/natural oxide interface.
We have studied the surface chemistry of 6H-SiC(0001) and 6H-SiC (000 (1) over bar) after wet-chemical treatment using photoelectron spectroscopy (PES) andlow-energy electron diffraction (LEED). The origin of chemically shifted components in the Si2p and C1s spectra is discussed in the light of previous studies onwet-chemically prepared surfaces and on silicate adlayer reconstructed surfaces. On 6H-SiC(0001) an ordered silicate adlayer was prepared by etching the surface withsulfuric acid based agents.
We studied two novel electrochemical treatments of CuInS2 solar-cell absorber films, introduced to remove the deleterious segregated CuS phase. Their influence onsurface topography, chemistry and electronic properties was investigated using in situ atomic force microscopy (AFM) and photoclectron spectroscopy, performed inpart at the U49/2 undulator beam line at BESSY II. The results are examined in order to develop an improved understanding of the chemical-electrochemical surfacetransformation processes.
The photo emission electron microscope (PEEM) with its direct imaging of the sample surface is a convenient tool for fast evaluation of large sample areas. It is possibleto handle samples with a size of 30 mm x 30 mm.With PEEM it is possible to visualise grain boundaries and crystal displacements without removing the native oxide. No special sample treatment is needed exceptchemical polishing of the sample surface and a HF-dip to obtain a thin (1 ... 2 nm) oxide layer.The quality of that oxide was proofed by high resolution photo electron spectroscopy (PES) at a synchrotron. The results were compared to native oxide onsingle-crystalline Si and no suboxides (e.g. SiO) were found. Our spectromicroscopic PEEM measurements show no difference in the oxide qualities of different grainsand on grain boundaries or crystal displacements. Furthermore no difference in the binding energy of Si2p core levels were found.In addition to grain boundaries other spot-like features were found on the sample surface. These could be identified in some cases as precipitation of Ca underneath thenative oxide.
The composition of CuInS2-films tends to differ from the ideal ratio of 1:1:2. A molecularlyvariation of dm=[Cu]/[In]-1 not equal 0 occurs due to the formation of binary phases as segregation's at the surface, as crystallites in the bulk of the film or at the surface of grains [1]. Furthermore, the range of homogeneity of the phase CuInS2 is relatively large caused by a low enthalpy of formation of defects like Cu-vacancies [2]. Segregation's at surfaces can be removed by KCN etching or by an electrochemical process [3, 4] We investigated the effect of an in-situ-heat-treatment of samples, prepared in the Cu-rich regime with additional amounts of copper, deposited on the surface of the Cu-In-S-films.We used Cu-In-S-films on molybdenum, prepared from precursors of Cu/In and a following reactive annealing-process in a sulphur-atmosphere. The experiments were performed as follows: The surface of the films was cleaned in situ to remove CuS-Phases by Argon-bombardment. The thin layers of additional Copper were prepared by evaporation of copper metal in Knudsen-cells. The thickness of this copper-films is in the range of monolayers, revealed by a calibration with copper on iron-substrates. After this deposition the samples were heated up to several temperatures (up to 550 ºC) for ten minutes, respectively. Here the molybdenum back-contact was used as electrical heater.
Zwei Schwingquarzsensoren mit gleicher sensitiver Beschichtung wurden zur Messung von CO2-Konzentrationen bei variierenden Luftfeuchten genutzt. Die Daten wurden neuronalen Netzen mit unterschiedlicher Architektur trainiert. Zwei Netze wurden auf ihre Generalisierungsfähigkeit getestet und miteinander verglichen. Für ein einstufiges Netz konnten Ergebnisse mit Fehlern kleiner 12% für die CO2-Konzentration und kleiner 5% für die Luftfeuchte erzielt werden. Ein zweistufiges Netz erkannte Kategorien der Luftfeuchte 100%-ig, für die CO2-Konzentration wurden Fehler kleiner 9% erreicht, wobei eine deutlich bessere Generalisierungsfähigkeit dieses Netzes im Vergleich zum einstufigen Netz zu verzeichnen ist.
Aluminium and Stainless Steel bi-metal material is extremely versatile and is used in a wide range of products; from cooking utensils to high technology applications such as automobile manufacture and Synchrotron radiation instrumentation. As a consequence of this wide range of applications the study of the formation of Aluminium Steel junctions and the bonding mechanism is of considerable industrialimportance [1-3].In a previous publication [4] evidence for a chemical bond, alloying at the interface was found. As the monochromator focus and welded region are similar in size about 200 µm (the actual interface from SEM is an order of magnitude smaller) a simple photoemission experiment of translating the sample perpendicular (vertically, weld horizontal) to the weld and measuring spectra was performed.