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Luo, Peng
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Rudolph, Matthias
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Stiftungsprofessur Hochfrequenz- und Mikrowellentechnik
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Reliable GaN HEMT Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements
(2016)
Luo, Peng
;
Bengtsson, Olof
;
Rudolph, Matthias
Novel Approach to Trapping Effect Modeling based on Chalmers Model and Pulsed S-Parameter Measurements
(2016)
Luo, Peng
;
Bengtsson, Olof
;
Rudolph, Matthias
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements
(2019)
Luo, Peng
;
Schnieder, Frank
;
Bengtsson, Olof
;
VadalĂ , Valeria
;
Raffo, Antonio
;
Heinrich, Wolfgang
;
Rudolph, Matthias
Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment
(2019)
Nasser, Caram
;
Luo, Peng
;
Schnieder, Frank
;
Rudolph, Matthias
;
Ritter, Dan
Chalmers GaN HEMT charge model revisited
(2018)
Luo, Peng
;
Schnieder, Frank
;
Rudolph, Matthias
Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs
(2018)
Luo, Peng
;
Schnieder, Frank
;
Bengtsson, Olof
;
Heinrich, Wolfgang
;
Rudolph, Matthias
A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements
(2017)
Luo, Peng
;
Bengtsson, Olof
;
Rudolph, Matthias
Compact Stacked Rugged GaN Low-Noise Amplifier MMIC under Input Power Overdrive Condition
(2023)
Kaule, Evelyne
;
Luo, Peng
;
Chevtchenko, Serguei A.
;
Rudolph, Matthias
;
Andrei, Cristina
1
to
8
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