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Huynh, Dang Khoa
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Empirical Large-Signal Medoling of mm-Wave FDSOI CMOS Based on Angelov Model
(2021)
Le, Quang Huy
;
Huynh, Dang Khoa
;
Lehmann, Steffen
;
Zhao, Zhixing
;
Kämpfe, Thomas
;
Rudolph, Matthias
22-nm FDSOI CMOS Noise Modeling and Anlaysis in mm-Wave Frequency Range
(2023)
Le, Quang Huy
;
Huynh, Dang Khoa
;
Lehmann, Steffen
;
Zhao, Zhixing
;
Schwan, Christoph T.
;
Kämpfe, Thomas
;
Rudolph, Matthias
Analysis of RF Stress Influence on Large-Signal Performance of 22nm FDSOI CMOS Transistors utilizing Waveform Measurement
(2022)
Huynh, Dang Khoa
;
Le, Quang Huy
;
Lehmann, Steffen
;
Zhao, Zhixing
;
Bossu, Germain
;
Arfaoui, Wafa
;
Wang, Defu
;
Kämpfe, Thomas
;
Rudolph, Matthias
W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs
(2020)
Le, Quang Huy
;
Huynh, Dang Khoa
;
Wang, D.
;
Zhao, Zhixing
;
Lehmann, Steffen
;
Kämpfe, Thomas
;
Rudolph, Matthias
Small-Signal Modelling of mm-Wave MOSFET up to 110 GHz in 22nm FDSOI Technology
(2019)
Le, Quang Huy
;
Huynh, Dang Khoa
;
Wang, Defu
;
Kämpfe, Thomas
;
Rudolph, Matthias
Impact of Off-State Stress on SiGe-channel p-FETs in 22nm FDSOI under Large-Signal Operation
(2023)
Huynh, Dang Khoa
;
Le, Quang Huy
;
Lehmann, Steffen
;
Zhao, Zhixing
;
Bossu, Germain
;
Arfaoui, Wafa
;
Kämpfe, Thomas
;
Rudolph, Matthias
Large-Signal Medeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI Technology
(2022)
Le, Quang Huy
;
Huynh, Dang Khoa
;
Nayak, Anurag
;
Lehmann, Steffen
;
Zhao, Zhixing
;
Kämpfe, Thomas
;
Rudolph, Matthias
Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22 nm FDSOI Technology
(2022)
Le, Quang Huy
;
Huynh, Dang Khoa
;
Lehmann, Steffen
;
Zhao, Zhixing
;
Kämpfe, Thomas
;
Rudolph, Matthias
Analysis of Hot-Carrier Degradation in 22nm FDSOI Transistors Using RF Small-Signal Characteristics
(2020)
Huynh, Dang Khoa
;
Le, Quang Huy
;
Duhan, Pardeep
;
Wang, Defu
;
Kämpfe, Thomas
;
Rudolph, Matthias
1
to
9
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