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N2O-Oxidation of Si(100)
(2001)
Electrochemically-induced oxidation and reduction reactions of UHV-cleaved GaAs(110) surfaces have been studied after emersion under potential control using highresolution synchrotron-induced photoelectron spectroscopy. High quality spectra of the As and Ga core 3d lines and the valence band region have been obtained. Thespectra of the anodic oxide show strong emission of bulk-like Ga2O3 and some As2O3 with the admixture of suboxides and hydroxides. Ga2O3 and As2O3 arecathodically reduced leaving the GaAs surface covered mostly with elemental As, some As-H and remnants of Ga-suboxides and -hydroxides.