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The absorption of the diatomic molecule AlF in the C2H2/N2O flame at 227.66 nm reveals an interesting feature. The calibration curve of the AlF absorption plotted against a rising concentration of hydrofluoric acid in solutions of constant aluminum content consists of two subsequent linear sections of different slopes. The bend position is reproducibly found at a molar fluorine-to-aluminum ratio of 3, calculated from the composition of the studied solutions. To explain this behavior, the most prominent aluminum flame species Al, AlF, and AlO were recorded as a function of the burner gas composition and flame observation height, using a high-resolution continuum source flame absorption spectrometer. As a result, the two-sectioned calibration curve is explained by two different pathways of AlF molecule formation: At a molar fluorine-to-aluminum ratio of below 3, aluminum is transported into the flame by two parallel pathways. One is the common pathway in absence of fluorine via the reduction of oxidic and/or carbidic species by the flame gases. The second pathway comprises the formation of gaseous AlF3 and its decomposition into AlF molecules and, subsequently, Al atoms. The fractionation of AlF3 releases Al atoms much faster than through the reduction of the oxidic and/or carbidic species. At molar fluorine-to-aluminum ratios of above 3, all aluminum is introduced to the flame via gaseous AlF3. A further increase of the hydrofluoric acid concentration increases the fluorine atom concentration in the flame, so that the AlF formation is determined by the recombination of aluminum and fluorine atoms.
In this study, the process of metal cation reduction on multi-crystalline silicon in a dilute hydrofluoric acid (HF) matrix is described using Ag(I), Cu(II), Au(III) and Pt(IV). The experimental basis utilized batch tests with various solutions of different metal cation and HF concentrations and multi-crystalline silicon wafers. The metal deposition kinetics and the stoichiometry of metal deposition and silicon dissolution were calculated by means of consecutive sampling and analysis of the solutions. Several reaction mechanisms and reaction steps of the process were discussed by overlaying the results with theoretical considerations. It was deduced that the metal deposition was fastest if the holes formed during metal ion reduction could be transferred to the valence bands of the bulk and surface silicon with hydrogen termination. By contrast, the kinetics were lowest when the redox levels of the metal ion/metal half-cells were weak and the equilibrium potential of the H3O+/H2 half-cells was high. Further minima were identified at the thresholds where H3O+ reduction was inhibited, the valence transfer via valence band mechanism was limited by a Schottky barrier and the dissolution of oxidized silicon was restricted by the activity of the HF species F−, HF2− and H2F3−. The findings of the stoichiometric conditions provided further indications of the involvement of H3O+ and H2O as oxidizing agents in addition to metal ions, and the hydrogen of the surface silicon termination as a reducing agent in addition to the silicon. The H3O+ reduction is the predominant process in dilute metal ion solutions unless it is disabled due to the metal-dependent equilibrium potential of the H3O+/H2 half-cell and the energetic level of the valence bands of the silicon. As silicon is not oxidized up to the oxidation state +IV by the reduction of the metal ions and H3O+, water is suspected of acting as a secondary oxidant. The stoichiometric ratios increased up to a maximum with higher molalities of the metal ions, in the manner of a sigmoidal function. If, owing to the redox level of the metal half-cells and the energetic level of the valence band at the metal–silicon contact, the surface silicon can be oxidized, the hydrogen of the termination is the further reducing agent.
In an effort to develop a cost-efficient technology for wireless high-temperature surface acoustic wave sensors, this study presents an evaluation of a combined method that integrates physical vapor deposition with electroless deposition for the fabrication of platinum-based planar antennas. The proposed manufacturing process becomes attractive for narrow, thick, and sparse metallizations for antennas in the MHz to GHz frequency range. In detail, narrow platinum-based lines of a width down to 40 μm were electroless-deposited on γ-Al2O3 substrates using different seed layers. At first, the electrolyte chemistry was optimized to obtain the highest deposition rate. Films with various thickness were prepared and the electrical resistivity, microstructure, and chemical composition in the as-prepared state and after annealing at temperatures up to 1100 ∘C were evaluated. Using these material parameters, the antenna was simulated with an electromagnetic full-wave simulation tool and then fabricated. The electrical parameters, including the S-parameters of the antenna, were measured. The agreement between the simulated and the realized antenna is then discussed.
The exact and precise determination of the boron concentration in silicon is still a challenge. A systematic investigation dealing with the digestions of 60 silicon samples with HF-HNO3 and subsequent boron determination by ICP-OES revealed that the concentration found could be up to 60% lower than the actual boron concentration depending on the composition of the sample solution. As the original boron–silicon compound that was identified was colloidally precipitated in the presence of an excess of hydrofluoric acid and then partially retained by filtration or by the sample introduction system, systematic lower boron concentrations were determined. In acidic, HF-free digestion solutions, this compound existed in a soluble form parallel to the borate in B(OH)4−. In an excess of hydrofluoric acid, the compound was converted into the colloidal form and, in parallel, B(OH)4− was converted to tetrafluoroborate, BF4−. For the composition of the colloidal compound, a molar ratio of boron to silicon of 1 : 4 could be determined. 11B-ss-NMR analysis revealed a tetrahedral geometry compound with a central boron atom surrounded by four silicon atoms. It is assumed that a soluble form with four –Si(OH)3 groups was present in the hydrofluoric acid-free solutions, while an insoluble form with four –SiF3 groups was present in HF-containing solution.
The reaction of Si with CuCl was studied by a combination of Raman microscopy, confocal microscopy and SEM-EDX. Two reaction pathways were observed to proceed at the same time. The first one is a solid state reaction between Si and Cu or CuCl that leads to a massive nucleation of Cu3Si exactly at the interfacial contacts between CuCl and Si. This study shows how the presence of the Cu3Si phase can be clearly identified and distinguished from areas simply covered with copper by means of Raman microscopic measurements. The second reaction pathway identified proceeds via a short-range gas phase transport of CuCl at low temperatures. The immediate reaction of the transported CuCl to the Si surface causes the massive spread of Cu in the close neighborhood around the CuCl source particles, however, without a nucleation of Cu3Si. The nucleation of Cu3Si precipitates and the short-range transport of CuCl have a tremendous impact on the underlying Si matrix. Tensile- and compressive-strained Si are generated in the immediate vicinity of the precipitates and at their interface to the surrounding silicon. Indications of high-pressure modifications of Si were found. Those areas of the Si surface which are affected by the short-range transport of CuCl and covered with low concentrations of copper exhibit a significant tensile strain. As recently shown, tensile and compressive strain in Si have a significant impact on the reactivity of Si. It might be assumed that Cu3Si-induced lattice strain in Si affects the reactivity of Si in the Direct Reactions in a similar matter.
The stoichiometry and kinetics of wet chemical etching of silicon in HF/HNO3 and HF/HNO3/H2SiF6 mixtures was investigated. The side reactions and main reaction pathways were identified by quantifying all reaction products. The relationship between the concentration of undissociated HNO3 and the consumption of HNO3, as well as the formation of H2 as a function of the mixing ratios were found by varying the etching mixture composition systematically.
Based on the etching rates determined, kinetic models for the reaction- and diffusion-controlled reaction mechanism are presented as well as the interrelation between the etchant composition and the transition between reaction- and diffusion-controlled etching.
The compound Li(Ni0.33Mn0.33Co0.33)O2 (NMC) is the state-of-the-art lithium-ion battery cathode material. Due to the increasing demand NMC is of crucial economically importance for the worldwide emerging market of electromobility. Recycling of end-of-life lithium-ion batteries to recover NMC, in particular of batteries from automotive vehicles, is one future strategy to save costs and to become more independent from the supply of the essential elements Co and Mn. Several concepts for NMC recycling from lithium-ion batteries are based on wet-chemical process steps, in particular, to separate the NMC containing cathode layer from the underlying metal foil. However, NMC is very sensitive against the attack by water and reagents that are added to promote the separation process.
The present study deals with the wet-chemical recycling of NMC using aqueous reagent solutions in a under varying process conditions. The recovered NMC samples are characterized in order to study the ongoing degradation at the surface of the NMC particles. In particular, two major degradation pathways are identified: (i) a preferential loss of lithium and nickel and (ii) the formation of passivation layers due to unwanted side reactions. DRIFT measurements are performed to study the NMC surface species after the recovery processes. SEM/EDX mappings are used to detect changes in the chemical composition in the surface region of the chemically treated NMC particles. Finally, a detailed study of the changes in the chemical state at the NMC particle surface is done by Raman microscopy by means of the deconvolution of the recorded spectra into their A1G component (representing the metal-oxide phonons) and into the Eg component (representing the oxide-metal-oxide phonons).
As result of this study, the consequences of different wet-chemical process conditions on the quality of the recovered NMC material are discussed.
A new method for the accurate and precise determination of impurities in silicon was developed and statistically validated. Particular attention was paid to the correct determination of the non-metals boron and phosphorus. Instead a time-consuming open vessel digestion under mild conditions, the dissolution of silicon took place in a microwave-assisted high-pressure system. The essential innovation of the presented method is the direct use of the concentrated digestion solution for ICP-OES measurements. This approach avoids the commonly used, time-consuming method that requires the removal of silicon and acid matrix by volatilisation, which is the most critical step in the determination of boron; however, the ICP-OES measurement in such high silicon matrices requires an entirely new optimisation of the measuring conditions, including the careful selection of emission lines with respect to selectivity and, spectral and non-spectral inferences. For quantification of the impurities contents, the methods of matrix matching (MMC) and multiple standard addition (MSA) were used. After optimisation of the spike concentrations for MSA, the qualities of both methods were compared through a statistical analysis. For the metallic impurities Al, Mg, Ca, Ti, Cr, Mn, Fe, Ni, Cu, and Zr and P, the validation was performed against certified reference materials (IPT134, IPT135, NIST57b). To validate boron, 9 silicon samples with different contents of boron from three interlaboratory comparisons were used. The new procedure allows for the determination of the impurities of 4N-silicon (12 elements).
The formation of diatomic AlF molecules was studied in a C2H2/N2O flame by means of a high-resolution continuum source flame absorption spectrometer using different fluorine containing compounds HF, H2SiF6, HBF4 and CF3COOH as fluorine sources. The fragmentation of these fluorine sources, as well the resulting impact on the AlF molecule formation, was derived from flame height distribution studies of the atomic and molecular species Al, AlO, Si, SiO, SiF, B and BF as a function of the fluorine concentration, the molar Al : F ratio and the burner gas composition. As a consequence, the used fluorine sources HF, H2SiF6, HBF4 and CF3COOH have been divided into two major groups. The first group of fluorine sources, covering HF, H2SiF6 and HBF4, decomposes during the drying of the aerosol under the formation of AlF3, which is the dominating species for the transport of aluminium into the flame. Its decomposition into AlF results in a high sensitivity of AlF molecular absorption at low flame observation heights. The second group of fluorine sources is exemplarily given by CF3COOH. In the upper parts of the flame the cleavage of the very stable C–F bond proceeds incompletely so that the sensitivity of the AlF molecular absorption is considerably lower than that for the other fluorine sources. In consequence, the AlF molecules are formed by the reaction between the fluorine atoms and the aluminium atoms, which are transported into the flame without the aid of fluorine, presumably via oxidic and/or carbidic species. The present investigations show that the sensitivity of the AlF molecular absorption and the pathway of AlF formation depend on the chemical form of the fluorine in the studied samples.
Multiwire sawing of silicon (Si) bricks is the state-of-the-art technology to produce multicrystalline Si solar wafers. The massive indentation of the abrasive Si carbide or diamond particles used leads to a heavily mechanically damaged layer on the wafer surface. Etching the surface layer using typical HF–HNO3–H2SiF6 acid mixtures reveals an unevenly distributed etch attack with etch rates several times higher than known for bulk Si etching. The present study follows the hypothesis that lattice strain, introduced by the sawing process, leads to an increase of the etch rate and determines the topography of the etched wafer, the so-called texture. Scratches were introduced into single crystalline Si surfaces in model experiments, and the magnitude and local distribution of lattice strain were extracted from confocal Raman microscopy measurements. The essential parameter used to describe the local reactivity of Si is the local etch rate, which was derived by confocal microscopy from the local height before and after etching. It was found that the reactivity of Si increases linearly with the magnitude of lattice strain. An increase in tensile strain raises the reactivity of Si significantly higher than an increase of compressive strain. The second decisive parameter is the reactivity of the etch mixture that correlates with the total concentration of the acid mixtures. Diluted acid mixtures with a low reactivity attack only the highest strained Si, whereas more concentrated and, therefore, more reactive acid mixtures can attack even slightly strained Si. Side effects, such as the behavior of amorphous or nanocrystalline Si and the generation of highly reactive intermediary species while etching, are discussed. The presence of unevenly distributed lattice strain of different magnitude and the resulting unevenly distributed reactivity of Si explain the features of a heterogeneous etch attack observed and the resulting topography of the etched wafer surface.