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The impact of lattice strain on the reactivity of silicon

  • The present study is focused on the question of how lattice strain mechanically introduced into silicon alters the chemical reactivity of the silicon atoms that are affected by the strain field on a microscopic length scale. The magnitude and local distribution of lattice strain are extracted from confocal Raman microscopy measurements. The reactivity of Si is expressed by the etch rate of Si after treatment with HF–HNO3–H2SiF6 mixtures. Then, the local etch rate is calculated from the local etch depth as determined by confocal microscopy. It has been found that tensile strain leads to the highest enhancement of the etch rate, followed by a compressive strain increase in the etch rate.

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Metadaten
Author: Jörg AckerORCiDGND, Tim Sieber, Thomas LangnerORCiD, Steven HeroldORCiD
Title of the source (English):Silicon for the Chemical and Solar Industry XIV
Publisher:The Norwegian University of Science and Technology
Place of publication:Trondheim
Editor: Birger Andresen, Lars Nygaard, Harry Rong, Merete Tangstad, Halvard Tveit, Ingrid Gamst Page
Document Type:Scientific journal article not peer-reviewed
Language:English
Year of publication:2018
Tag:Raman spectroscopy; confocal microscopy; etching; lattice strain; mechanical activation; mechanochemistry; silicon; stress
First Page:11
Last Page:20
Faculty/Chair:Fakultät 2 Umwelt und Naturwissenschaften / FG Physikalische Chemie
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