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The influence of lattice deformations on the etch rates of potassium hydroxide on silicon

  • One of the most common methods to analyse silicon materials is Raman-spectroscopy.[1] More recently there is a focus in the analysis of lattice deformations during sample preparations.[2] These deformations not only increase the chance of crack formation but also increases the chemical reactivity of the silicon towards etch processes or oxidation processes.[3] In this contribution, we will present our latest results on the influence of lattice deformations induced by scratches and saw damage on the etch rate of potassium hydroxide. The lattice deformation will be measured using Raman-microscopy and correlated with the height difference measured with confocal microscopy. It will be shown that the etch rate strongly depends on the lattice deformation and that the etch rate will increase by up to the factor 10 in areas with tensile deformation.

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Metadaten
Author: Steven HeroldORCiD, Jörg AckerORCiDGND
Title of the source (English):9th European Silicon Days, 9-12 September 2018, Saarbrücken, Germany, Book of abstracts
Publisher:Universität des Saarlandes
Place of publication:Saarbrücken
Editor: David Scheschkewitz, Guido Kickelbick
Document Type:Conference Proceeding
Language:English
Year of publication:2018
Tag:Raman spectroscopy; confocal microscopy; etching; lattice strain; saw damage; silicon
First Page:S. 198
Faculty/Chair:Fakultät 2 Umwelt und Naturwissenschaften / FG Physikalische Chemie
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