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Measurement of the temperature dependence of lattice deformations in silicon using Raman microscopy

  • One of the most common methods to analyse silicon materials is Raman-spectroscopy.[1] More recently there is a focus in the analysis of lattice deformations during sample preparations.[2] These deformations not only increase the chance of crack formation but also increases the chemical reactivity of the silicon towards etch processes or oxidation processes.[3] In this contribution, we will present our latest Raman evaluation technique for silicon lattice deformation and a way to control them using rapid thermal annealing. The transitions and relaxation of different lattice deformation states after the rapid heating to up to 900°C will be analysed in detail, while also the recrystallisation of amorphous silicon will be discussed from the aspects of lattice deformations. It will be shown that during the tempering the lattice deformation on scratched, indented or diamond wire sawn samples homogenises to a mainly weak tensile deformed state and that these homogenisation processes happen only up to certain critical temperatures.

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Metadaten
Author: Steven HeroldORCiD, Jörg AckerORCiDGND
Title of the source (English):9th European Silicon Days, 9-12 September 2018, Saarbrücken, Germany, Book of abstracts
Publisher:Universität des Saarlandes
Place of publication:Saarbrücken
Editor: David Scheschkewitz, Guido Kickelbick
Document Type:Conference Proceeding
Language:English
Year of publication:2018
Tag:Raman microscopy; lattice strain; phase transition; silicon
First Page:S. 197
Faculty/Chair:Fakultät 2 Umwelt und Naturwissenschaften / FG Physikalische Chemie
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