Ternary and Quaternary Ni(Si)GeSn Contact Formation for highly strained Ge p- and n-MOSFETs
Author: | S. Wirths, R. Troitsch, G. Mussler, T. Stoica, J.-M. Hartmann, Peter Zaumseil, Thomas Schroeder, Siegfried Mantl, Dan Buca |
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DOI: | https://doi.org/10.1088/0268-1242/30/5/055003 |
ISSN: | 0268-1242 |
Title of the source (English): | Semiconductor Science and Technology |
Document Type: | Scientific journal article peer-reviewed |
Language: | English |
Year of publication: | 2015 |
Volume/Year: | 30 |
Issue number: | 5 |
First Page: | 055003 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien |