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Variability and Energy Consumption Tradeoffs in Multilevel Programming of RRAM Arrays

  • Achieving a reliable multi-level programming operation in resistive random access memory (RRAM) arrays is still a challenging task. In this work, we assessed the impact of the voltage step value used by the programming algorithm on the device-to-device (DTD) variability of the current distributions of four conductive levels and on the energy consumption featured by programming 4-kbit HfO2-based RRAM arrays. Two different write-verify algorithms were considered and compared, namely, the incremental gate voltage with verify algorithm (IGVVA) and the incremental step pulse with verify algorithm (ISPVA). By using the IGVVA, a main trade-off has to be taken into account since reducing the voltage step leads to a smaller DTD variability at the cost of a strong increase in the energy consumption. Although the ISPVA can not reduce the DTD variability as much as the IGVVA, its voltage step can be decreased in order to reduce the energy consumption with almost no impact on the DTD variability. Therefore, the final decision on whichAchieving a reliable multi-level programming operation in resistive random access memory (RRAM) arrays is still a challenging task. In this work, we assessed the impact of the voltage step value used by the programming algorithm on the device-to-device (DTD) variability of the current distributions of four conductive levels and on the energy consumption featured by programming 4-kbit HfO2-based RRAM arrays. Two different write-verify algorithms were considered and compared, namely, the incremental gate voltage with verify algorithm (IGVVA) and the incremental step pulse with verify algorithm (ISPVA). By using the IGVVA, a main trade-off has to be taken into account since reducing the voltage step leads to a smaller DTD variability at the cost of a strong increase in the energy consumption. Although the ISPVA can not reduce the DTD variability as much as the IGVVA, its voltage step can be decreased in order to reduce the energy consumption with almost no impact on the DTD variability. Therefore, the final decision on which algorithm to employ should be based on the specific application targeted for the RRAM array.show moreshow less

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Metadaten
Author: Eduardo Perez, Mamathamba Kalishettyhalli Mahadevaiah, Emilio Perez-Bosch Quesada, Christian WengerORCiD
DOI:https://doi.org/10.1109/TED.2021.3072868
ISSN:0018-9383
ISSN:1557-9646
Title of the source (English):IEEE Transactions on Electron Devices
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2021
Tag:HfO2; Multilevel switching; RRAM
Volume/Year:68
Issue number:6
First Page:2693
Last Page:2698
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien
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